Zobrazeno 1 - 10
of 14
pro vyhledávání: '"F. H. Köklü"'
Autor:
Euan Ramsay, Bennett B. Goldberg, M.S. Unlu, Thomas G. Bifano, F. H. Köklü, Yang Lu, Abdulkadir Yurt, Christopher R. Stockbridge
Publikováno v:
Microelectronics Reliability. 52:2120-2122
Aplanatic solid immersion lens (SIL) microscopy is required to achieve the highest possible resolution for next generation silicon IC backside inspection and failure analysis. However, aplanatic SILs are very susceptible to spherical aberrations intr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb99d227378730c8286930fa504ea974
https://doi.org/10.1016/j.microrel.2012.06.026
https://doi.org/10.1016/j.microrel.2012.06.026
Autor:
F. H. Köklü, Yang Lu, Abdulkadir Yurt, Thomas G. Bifano, Euan Ramsay, Bennett B. Goldberg, M.S. Unlu, Jerome Mertz
Publikováno v:
Microelectronics Reliability. 51:1637-1639
Current state-of-the-art in backside fault isolation and logic analysis utilizes solid immersion lens (SIL) imaging in the central configuration. An attractive advancement is the development and integration of an aplanatic SIL, which allows significa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53bd9f3f3da1e6a4d07747154d6db1d3
https://doi.org/10.1016/j.microrel.2011.07.047
https://doi.org/10.1016/j.microrel.2011.07.047
Autor:
F. H. Köklü, Yang Lu, Euan Ramsay, Bennett B. Goldberg, Abdulkadir Yurt, M.S. Unlu, Christopher R. Stockbridge
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper demonstrates a differential dual-phase interferometric imaging method in which the reflected probe beam modulated weakly by the charge carriers is mixed separately with two reference beams with a known phase shift in between. Performing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9138a3a0badcfcb1b4e6146b7174a01b
https://doi.org/10.31399/asm.cp.istfa2012p0172
https://doi.org/10.31399/asm.cp.istfa2012p0172
Autor:
Euan Ramsay, Bennett B. Goldberg, Thomas G. Bifano, M.S. Unlu, Christopher R. Stockbridge, Abdulkadir Yurt, Yang Lu, F. H. Köklü
Publikováno v:
Scopus-Elsevier
Aplanatic solid immersion lens (SIL) microscopy is required to achieve the highest possible resolution for next generation silicon IC backside inspection and failure analysis. However, aplanatic SILs are susceptible to spherical aberration introduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f161480c0f1f66a940c4d6e3513ad48d
https://doi.org/10.31399/asm.cp.istfa2012p0006
https://doi.org/10.31399/asm.cp.istfa2012p0006
Publikováno v:
International Symposium for Testing and Failure Analysis.
We investigate a complementary objective lens design for correcting chromatic aberration in the use of a silicon aplanatic solid immersion lens for back-side photon emission microscopy of metal-oxide-semiconductor circuits. Our simulations demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2abad608a2ba9658035ae973259f74d
https://doi.org/10.31399/asm.cp.istfa2011p0406
https://doi.org/10.31399/asm.cp.istfa2011p0406
Autor:
Euan Ramsay, Bennett B. Goldberg, Thomas G. Bifano, M.S. Unlu, Christopher R. Stockbridge, F. H. Köklü, Jerome Mertz, Abdulkadir Yurt, Yang Lu
Publikováno v:
Scopus-Elsevier
We present a method for correcting spherical aberrations in solid immersion microscopy through the use of a deformable mirror. Aberrations in solid immersion imaging for failure analysis can be induced through off-axis imaging, errors in lens fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87cc0402e744e778e07f8ed354e140aa
https://doi.org/10.31399/asm.cp.istfa2011p0026
https://doi.org/10.31399/asm.cp.istfa2011p0026
Publikováno v:
Optics letters. 34(8)
We investigate the effect of an annular pupil-plane aperture in confocal imaging while using an NA increasing lens. We show that focal spot shape is highly sensitive to both polarization and angular spectrum of the incoming light. We demonstrate a la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a06eb846f46fabbd14ad25ed0ba5b892
https://pubmed.ncbi.nlm.nih.gov/19370137
https://pubmed.ncbi.nlm.nih.gov/19370137
Publikováno v:
LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society.
We demonstrate a lateral spatial resolution of 160 nm (lambda0/8) using apodization in subsurface backside microscopy of silicon integrated circuits - a record resolution for one-photon excitation schemes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8572b04a356b9db4fed4b1fdd4b21e4
https://doi.org/10.1109/leos.2008.4688631
https://doi.org/10.1109/leos.2008.4688631
Publikováno v:
LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society.
We theoretically demonstrate that location of a dipole emitter with respect to the interface significantly affects the collected signal intensity. Optimally engineered samples can provide 4 fold enhancement in collection.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2944c6d3832702c537e7ef6f2c907c7
https://doi.org/10.1109/leos.2008.4688667
https://doi.org/10.1109/leos.2008.4688667
Publikováno v:
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings.
We report a lateral spatial resolution of 0.37 mum with a custom infrared widefield microscope while imaging subsurface features in silicon integrated circuits from backside. In addition, 2.65 mum apart polysilicon and metal layers can be differentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ae19c89ead577a0aa8ecbcd3f93233
https://doi.org/10.1109/leos.2007.4382516
https://doi.org/10.1109/leos.2007.4382516