Zobrazeno 1 - 10
of 39
pro vyhledávání: '"F. Höhnsdorf"'
Autor:
Jerry V. Moloney, A. Wagner, W. W. Rühle, Eoin P. O'Reilly, S. W. Koch, Martin R. Hofmann, Jörg Hader, W.W. Chow, B. Borchert, Wolfgang Stolz, Henning Riechert, J. Koch, Hans Christian Schneider, Nils C. Gerhardt, C. Ellmers, A.Y. Egorov, F. Höhnsdorf
Publikováno v:
IEEE Journal of Quantum Electronics. 38:213-221
The ultrafast emission dynamics of a 1.3-/spl mu/m (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femtosecond luminescence upconversion. We obtain a minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps. Laser oper
Autor:
Cinzia Giannini, Andreas K. Schaper, Leander Tapfer, Wolfgang Stolz, A. Hasse, Kerstin Volz, J. Koch, F. Höhnsdorf
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 8:205-209
The structural properties of (GaIn)(NAs)/GaAs multiple quantum well structures (MQW) have been evaluated by means of high-resolution X-ray diffraction (XRD) in combination with simulation using dynamic modelling and TEM studies. This metastable mater
Autor:
F. Höhnsdorf, H. Grüning, P. M. A. Vicente, J. Koch, Peter J. Klar, Wolfram Heimbrodt, Wolfgang Stolz, J. Camassel
Publikováno v:
High Pressure Research. 18:29-34
GaNxAs1−x samples with × ranging from 0.043% to 2.8% were grown by MOVPE. Analysing low-temperature photoluminescence spectra taken under hydrostatic pressure and room temperature photomodulated reflectance spectra gives strong evidence that the t
Publikováno v:
Journal of Electronic Materials. 29:165-168
(GaIn)(NAs)/GaAs multiple quantum well (MQW) structures with high structural perfection as determined from high-resolution x-ray diffraction (XRD) analysis have been deposited by low-temperature metal organic vapor phase epitaxy (MOVPE) at 525°C usi
Autor:
P. J. Klar, Wolfgang Stolz, Wolfram Heimbrodt, H. Grüning, F. Höhnsdorf, Limei Chen, J. Koch, Th. Hartmann
Publikováno v:
physica status solidi (b). 215:39-45
We have investigated the unusual band formation at the Γ-point and in the vicinity of the L-point in the alloy system Ga(N, As) by various spectroscopic methods. A series of GaNxAs1—x epitaxial layers with x varying from 0.05 to 2.8% was grown on
Publikováno v:
Journal of Crystal Growth. 195:91-97
The liquid Si-compound ditertiarybutyl silane (DTBSi) has been investigated as a doping source for the metal organic vapour-phase epitaxy (MOVPE) of InP and GaAs using TBP or DTBP and TBAs as less hazardous group-V-sources. For both material systems
Publikováno v:
Journal of Crystal Growth. 195:391-396
The optimization of the metalorganic vapour phase epitaxial (MOVPE) growth of lattice-matched (GaIn)(NAs)/GaAs multiple quantum well (MQW) structures grown by using triethylgallium (TEGa) and trimethylindium (TMIn) in combination with tertiarybutyl a
Publikováno v:
Journal of Crystal Growth. 195:98-104
The C- and O-incorporation behaviour in (AlGa)As (0⩽ x ⩽1) epitaxial layers grown by metal organic vapour phase epitaxy (MOVPE) using tertiary butyl arsine (TBAs) has been investigated in detail by means of calibrated SIMS, XRD, and Hall studies.
Autor:
Jörg Lorberth, M. Müller, Ernst O. Göbel, H. Protzmann, Z. Spika, Wolfgang Stolz, F. Höhnsdorf
Publikováno v:
Journal of Crystal Growth. 170:155-160
In this study, the use of novel, liquid, organic arsenic precursors as substitutes for the highly toxic hydride gas arsine (AsH3) in low pressure metalorganic vapor phase epitaxy (LP-MOVPE) of (GaIn)As lattice matched on InP has been investigated. Th
Autor:
W. W. Rühle, S. Schäfer, Wolfgang Stolz, Henning Riechert, J. Koch, S. W. Koch, F. Höhnsdorf, A.Yu. Egorov, Jörg Hader, C. Ellmers, C. Schlichenmeier, Jerome V. Moloney, A. Wagner, B. Borchert, Eoin P. O'Reilly, Martin R. Hofmann
Publikováno v:
Applied Physics Letters. 78:3009-3011
Optical gain spectra of (GaIn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (GaIn)(AsP)/InP structure. Good agreement of the experimental results with computed sp