Zobrazeno 1 - 6
of 6
pro vyhledávání: '"F. Gutle"'
Autor:
M. Casar, Patrick Waltereit, F. Gutle, H. Walcher, Rudolf Kiefer, M Simon, Michael Mikulla, Stefan Müller, Oliver Ambacher, Andreas Graff, M. Baeumler, Rudiger Quay, Michael Dammann, Frank Altmann, Wolfgang Bronner
Publikováno v:
Materials Science Forum. 725:79-82
An AlGaN/GaN high electron mobility transistor (HEMT) stressed at 10 GHz and increased channel temperatures of T ≈ 260 °C has been analyzed by electroluminescence microscopy (ELM) and infrared thermography (IRT). After stress a negative threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e760a90f29f19e47cd32f7250834c73
https://doi.org/10.4028/www.scientific.net/msf.725.79
https://doi.org/10.4028/www.scientific.net/msf.725.79
Autor:
Michael Dammann, Patrick Waltereit, Richard Reiner, M. Wespel, Stefan Müller, Vladimir Polyakov, Rudiger Quay, Oliver Ambacher, Fouad Benkhelifa, Michael Mikulla, M. Baeumler, F. Gutle, Joachim Wagner
The lifetime and stability of AlGaN/GaN heterostructure field effect transistors at high power levels can be enhanced by introducing field plates to reduce electric field peaks in the gate-drain region. Simulations of the electric field distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2331b481d2a8d1a694f4247940e0c16c
https://publica.fraunhofer.de/handle/publica/235936
https://publica.fraunhofer.de/handle/publica/235936
Autor:
Michael Dammann, J. Ruster, Stefan Müller, Oliver Ambacher, Richard Reiner, F. Gutle, Fouad Benkhelifa, M. Baeumler, M. Casar, Patrick Waltereit, Michael Mikulla, Rudiger Quay, Heiko Czap, Helmer Konstanzer
Publikováno v:
2012 IEEE International Integrated Reliability Workshop Final Report.
The degradation of packaged GaN HEMTs for high power applications has been studied under long term reverse bias step stress tests. Increases of leakage current and dynamic R on resistance have been found. This degradation is possibly caused by the fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6acc679ea7e2d13f16bd7d7977e37f82
https://doi.org/10.1109/iirw.2012.6468930
https://doi.org/10.1109/iirw.2012.6468930
Autor:
F. Gutle, Wolfgang Bronner, H. Walcher, Stefan Müller, Rudolf Kiefer, Michael Mikulla, Frank Altmann, Patrick Waltereit, Andreas Graff, M Simon, Ruediger Quay, M. Casar, Michael Dammann, Oliver Ambacher, M. Baeumler
Publikováno v:
2011 IEEE International Integrated Reliability Workshop Final Report.
The reliability and degradation mechanism of AlGaN/GaN single stage amplifiers after 10 GHz stress at a drain voltage of 42 V and channel temperatures above 250°C was investigated using electroluminescence (EL) imaging, infrared thermography, and TE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28198c2328d2ce495930736768d28fc6
https://doi.org/10.1109/iirw.2011.6142585
https://doi.org/10.1109/iirw.2011.6142585
Autor:
Oliver Ambacher, Reza Behtash, F. Bourgeois, M. Baeumler, Vladimir Polyakov, Paul J. van der Wel, K. Riepe, Rudiger Quay, Helmer Konstanzer, Wilfried Pletschen, Patrick Waltereit, T. Rodle, Michael Dammann, Wolfgang Bronner, M. Casar, Jos Klappe, Michael Mikulla, F. Gutle
Results from on-wafer electroluminescence (EL) microscopy on AlGaN/GaN high-electron-mobility transistors with leakage currents varying over four orders of magnitude are presented. In the off-state region the integrated EL intensity is proportional t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2462a0e432abe0b458b5e139006e2c05
https://publica.fraunhofer.de/handle/publica/221516
https://publica.fraunhofer.de/handle/publica/221516
Autor:
Rudiger Quay, Joachim Wagner, Fouad Benkhelifa, Vladimir Polyakov, M. Casar, Michael Mikulla, F. Gutle, Michael Dammann, Stefan Müller, Oliver Ambacher, M. Baeumler
Publikováno v:
Semiconductor Science and Technology. 27:125003
We report on electroluminescence (EL) emission from AlGaN/GaN high electron mobility transistors (HEMTs). Intensity maxima at the drain-side edge of the gate foot and at the drain-side edge of the gate field plate are observed. To relate the EL inten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::984110e8c028bfb78ffda2c42a6c9d4a
https://doi.org/10.1088/0268-1242/27/12/125003
https://doi.org/10.1088/0268-1242/27/12/125003