Zobrazeno 1 - 10
of 38
pro vyhledávání: '"F. Grellner"'
Publikováno v:
Journal of Materials Science Materials in Medicine. 9:291-295
Commercial ceramics for dental computer aided design/computer aided manufacture (CAD/CAM) restorations suffer from surface chipping defects and microcracking. The influence of CAD/CAM machining of dental materials on the mechanical strength and exten
Publikováno v:
Surface Science. 383:13-24
The structural aspects of the regimes of stepwise oxidation of Co(1120) by admission of oxygen from 0.1 to 5 L were studied by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and change in work function (Δo). Six diffe
Publikováno v:
Surface Science. 340:153-158
The effect of ion bombardment with Ar+ and Kr+ on Co(1120) has been studied by means of low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and UV photoelectron spectroscopy (UPS). At 300 K, the ion bombardment leads to the
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 71:107-115
Coverage dependence of oxygen adsorption on the hexagonal Co(11 2 0) surface is studied at 100 and 320 K by means of Auger electron spectroscopy (AES), photoelectron spectroscopy (XPS, UPS) and change in work function (Δφ). Adsorption of oxygen at
Publikováno v:
Surface Science. 312:143-150
Adsorption of water on the hexagonal Co(112¯0) surface is studied at temperatures between 100 and 500 K by means of photoelectron spectroscopy (XPS, UPS) and change in work function (Δφ). Molecular adsorption at 100 K is accompanied by the formati
Publikováno v:
Surface Science. 296:374-382
Adsorption of oxygen on the (1120) surface of hexagonal cobalt at 100 and 320 K has been studied by means of low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), UV photoelectron spectroscopy (UPS), change of work function
Publikováno v:
Journal of materials science. Materials in medicine. 9(5)
Commercial ceramics for dental computer aided design/computer aided manufacture (CAD/CAM) restorations suffer from surface chipping defects and microcracking. The influence of CAD/CAM machining of dental materials on the mechanical strength and exten
Publikováno v:
International Symposium for Testing and Failure Analysis.
Effort and complexity for failure analysis are increasing on state of the art logic designs. As chips become more and more complex, functional tests are not possible anymore [1] and are replaced with automatic test pattern generation (ATPG) using a f
Autor:
P. Wensley, Norman Robson, B. Lemaitre, E. Demm, F. Grellner, C. Wann, P. Kim, Klaus Schruefer, Robert C. Wong, G. Friese, G. Knoblinger, O. Prigge, R. Zoeller, Robert Hannon, J. Barth, G. Brase, Mark Hoinkis, Reinhard Mahnkopf, J. Pape, S.S. Iyer, T. Schiml, B. Flietner, K. Han, K. Holloway, F. Towler, Michael D. Armacost, A. Augustin, Nivo Rovedo, R. Busch, R. Mih, Terence B. Hook, W. Neumueller, G. Dietz, Chih-Yung Lin, B. Chen, S. Srinivasan, M. Stetter, Herbert L. Ho, Thomas Schafbauer, K.-H. Allers
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
A 0.18 /spl mu/m high performance/low power technology platform is described which allows 'system on a chip integration' for a broad spectrum of products. Based on a generic digital process additional modules can be added in a modular and cost effect
Autor:
E. Hsiung, Terry A. Spooner, G. Brase, Erdem Kaltalioglu, F. Grellner, Mark Hoinkis, B. von Ehrenwall, D. Warner, Klaus Schruefer, T. Schiml, L. Burrell, Robert C. Wong, C. Wang, Thomas Schafbauer, A. Von Ehrenwall, Tobias Mono, P. Kim, G. Knoblinger, Fernando Guarin, K.C. Chen, Petra Felsner, Alan J. Leslie, Uwe Schroeder, S. Biesemans, E. Demm, Andy Cowley, J. Gill, L.K. Han, S. Kulkarni, P. Leung
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
We describe an advanced 0.13 /spl mu/m CMOS technology platform optimized for density, performance, low power and analog/mixed signal applications. Up to 8 levels of copper interconnect with the industry's first true low-k dielectric (SiLK, k=2.7) (G