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Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas

Autor: M J, Milla, F, Barho, F, González-Posada, L, Cerutti, B, Charlot, M, Bomers, F, Neubrech, E, Tournie, T, Taliercio

Publikováno v: Optics express. 25(22)

We demonstrate surface enhanced infrared absorption spectroscopy using 1-dimensional highly doped semiconductors based on Si-doped InAsSb plasmonic nano-antennas. Engineering the plasmonic array to support the localized surface plasmon resonance alig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::33c826ca4ab617c70edb3ba8340d7567
https://pubmed.ncbi.nlm.nih.gov/29092159

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Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

Autor: Andrés Redondo-Cubero, Raúl Gago, E. Muñoz, A.F. Braña, F. González-Posada, M.-A. di Forte Poisson, U. Kreissig

Publikováno v: Thin Solid Films. 516:8447-8452

The Al content in Al x Ga 1 − x N/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1 x x > 0.2. The assessment of Al

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b130c1c9e7283ace24fd6c05d500e85c
https://doi.org/10.1016/j.tsf.2008.04.069

Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

Autor: A. Campa, A. Passaseo, F. González-Posada, E. Muñoz, Vittorianna Tasco, N. Franco, Katharina Lorenz, Iolena Tarantini, Andrés Redondo-Cubero

Publikováno v: Journal of applied physics 105 (2009): 063510.
info:cnr-pdr/source/autori:V. Tasco; A. Campa; I. Tarantini; A. Passaseo; F. González-Posada; A. Redondo-Cubero; K. Lorenz; N. Franco; E. Muñoz/titolo:Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers/doi:/rivista:Journal of applied physics/anno:2009/pagina_da:063510/pagina_a:/intervallo_pagine:063510/volume:105

The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1a413d7786bcb5be4cd668affcd28bd
https://publications.cnr.it/doc/181743