Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS-based devices

Autor: P. Fiorenza 1, G. Greco 1, M. Vivona 1, F. Giannazzo 1, S. Di Franco 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Iucolano 2, A. Patti 2, F. Roccaforte 1

Publikováno v: Physica status solidi. A, Applications and materials science
214 (2017): 1600366-1–1600366-7. doi:10.1002/pssa.201600366
info:cnr-pdr/source/autori:P. Fiorenza 1, G. Greco 1, M. Vivona 1, F. Giannazzo 1, S. Di Franco 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Iucolano 2, A. Patti 2, F. Roccaforte 1/titolo:Electrical characterization of trapping phenomena at SiO2%2FSiC and SiO2%2FGaN in MOS-based devices/doi:10.1002%2Fpssa.201600366/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600366-1/pagina_a:1600366-7/intervallo_pagine:1600366-1–1600366-7/volume:214

In this paper, some aspects of the electrical characterization of trapping phenomena occurring at interfaces between insulators and wide band semiconductors (WBG) are presented, with a focus on the SiO2/SiC and SiO2/GaNsystems. In particular, time re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::e42244b78b02d9a721090b69f8a95f71

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)

Autor: F. Giannazzo 1, I. Deretzis 1, G. Nicotra 1, G. Fisichella 1, 3, Q.M. Ramasse 2, C. Spinella 1, F. Roccaforte 1, A. La Magna 1

Publikováno v: Journal of crystal growth 393 (2014): 150–155. doi:10.1016/j.jcrysgro.2013.10.045
info:cnr-pdr/source/autori:F. Giannazzo 1, I. Deretzis 1, G. Nicotra 1, G. Fisichella 1,3, Q.M. Ramasse 2, C. Spinella 1, F. Roccaforte 1, A. La Magna 1/titolo:High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H-SiC (0001)/doi:10.1016%2Fj.jcrysgro.2013.10.045/rivista:Journal of crystal growth/anno:2014/pagina_da:150/pagina_a:155/intervallo_pagine:150–155/volume:393

In this paper, the structural and electronic properties of epitaxial graphene (EG) grown on 8 degrees-off 4H-SiC (0001) by high temperature thermal processes have been extensively investigated by a combination of several high resolution characterizat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2afe8482bab427dcf094368118d49249
https://doi.org/10.1016/j.jcrysgro.2013.10.045

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

Autor: F. Giannazzo 1, G. Fisichella 1, A. Piazza 1, 2, 3, S. Di Franco 1, G. Greco 1, S. Agnello 2, F. Roccaforte 1

Publikováno v: Physica status solidi. Rapid research letters
info:cnr-pdr/source/autori:F. Giannazzo 1, G. Fisichella 1, A. Piazza 1,2,3, S. Di Franco 1, G. Greco 1, S. Agnello 2, F. Roccaforte 1/titolo:Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors/doi:10.1002%2Fpssr.201600209/rivista:Physica status solidi. Rapid research letters (Print)/anno:2016/pagina_da:797/pagina_a:801/intervallo_pagine:797–801/volume:10

The transfer characteristics (ID-VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as-prepared devices and after annealing at different temperatures (T-ann from 150 degrees C to 200 degrees

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bad03450a699c5094d0e1b7ba3e13cfe
http://hdl.handle.net/10447/225204

Conduction mechanisms at SiO2/4H-SiC interfaces in MOS-based devices subjected to post deposition annealing in N2O

Autor: P. Fiorenza 1, F. Giannazzo 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Roccaforte 1

Publikováno v: Materials science forum 858 (2016): 705–708. doi:10.4028/www.scientific.net/MSF.858.705
info:cnr-pdr/source/autori:P. Fiorenza 1, F. Giannazzo 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Roccaforte 1/titolo:Conduction mechanisms at SiO2%2F4H-SiC interfaces in MOS-based devices subjected to post deposition annealing in N2O/doi:10.4028%2Fwww.scientific.net%2FMSF.858.705/rivista:Materials science forum/anno:2016/pagina_da:705/pagina_a:708/intervallo_pagine:705–708/volume:858

This paper reports on the conduction mechanisms through the gate oxide and trapping effects at SiO2/4H-SiC interfaces in MOS-based devices subjected to post deposition annealing in N2O. The phenomena were studied by temperature dependent current-volt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::dcba7ae7d70fbfbd54a6bd9aae749c34
https://publications.cnr.it/doc/374977

Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality

Autor: G. Greco 1, F. Iucolano 2, C. Bongiorno 1, S. Di Franco 1, F. Giannazzo 1, M. Leszczy?ski 3, F. Roccaforte 1

Publikováno v: 38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014), pp. 95–96, Delphi (Greece), 15-18 June, 2014
info:cnr-pdr/source/autori:G. Greco 1, F. Iucolano 2, C. Bongiorno 1, S. Di Franco 1, F. Giannazzo 1, M. Leszczy?ski 3, F. Roccaforte 1/congresso_nome:38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014)/congresso_luogo:Delphi (Greece)/congresso_data:15-18 June, 2014/anno:2014/pagina_da:95/pagina_a:96/intervallo_pagine:95–96

In this paper, the electrical and structural properties of Ti/Al Ohmic contacts have been investigated comparing AlGaN/GaN heterostructures with different dislocation density. The annealing temperature leading to Ohmic be-haviour is related to the ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::daa23188f865540e5f595b5d92e1e754
https://publications.cnr.it/doc/284906