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Optical and Electrical Studies of the Double Acceptor Levels of the Mercury Vacancies in HgCdTe

Autor: Stéphane Brochen, Alain Lusson, F. Gemain, M. De Vita, O. Gravrand, I. C. Robin

Publikováno v: Journal of Electronic Materials. 41:2867-2873

Correlations between photoluminescence and temperature-dependent Hall measurements were carried out on unintentionally doped HgCdTe epilayers with cadmium composition of 32.7%. These films were grown by liquid-phase epitaxy and post-annealed under di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::38c244994d5cc4c0baae0254ebf23b88
https://doi.org/10.1007/s11664-012-2104-8

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Photoluminescence studies of CdS layers for solar cells

Autor: Sergio Bernardi, Ivan-Christophe Robin, Sébastien Renet, F. Gemain

Publikováno v: physica status solidi c. 9:1740-1743

Photoluminescence (PL) measurements were performed on polycrystalline CdS films grown by close space sublimation (CSS) or by chemical bath deposition (CBD) in order to observe the evolution of emission features according to the deposition technique a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0ef867989f519c5a3fa576b2a45bc057
https://doi.org/10.1002/pssc.201100539

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Reduction of the dislocation density in molecular beam epitaxial CdTe(211)B on Ge(211)

Autor: F. Gemain, Ivan C. Robin, G. Badano, B. Amstatt, X. Baudry

Publikováno v: Journal of Crystal Growth. 312:1721-1725

The high dislocation density (2×10 7 /cm 2 for a thickness of 7 μm) in CdTe(2 1 1)B on Ge(2 1 1) has become a roadblock for the technological exploitation of this material. We present a systematic study of in situ and post-growth annealing cycles a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::205148fa8776a5dc93367508e0c3b0c9
https://doi.org/10.1016/j.jcrysgro.2010.02.011

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Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

Autor: Stéphane Brochen, Pierre Ferret, Guy Feuillet, Ivan-Christophe Robin, F. Gemain, Matthieu Lafossas, Julien Pernot

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2014, 115 (11), pp.113508. ⟨10.1063/1.4868591⟩
Journal of Applied Physics, American Institute of Physics, 2014, 115 (11), pp.113508. ⟨10.1063/1.4868591⟩

ZnO epilayers usually exhibit high n-type residual doping which is one of the reasons behind the difficulties to dope this material p-type. In this work, we aimed at determining the nature of the involved impurities and their potential role as dopant

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90e76c6435c405b0b742efd105a96a85
https://hal.science/hal-00984425

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Composition dependence of the mercury vacancies energy levels in HgCdTe: Evolution of the 'negative-U' property

Autor: Guy Feuillet, Ivan-Christophe Robin, F. Gemain

Publikováno v: Journal of Applied Physics. 114:213706

HgCdTe films grown by liquid phase epitaxy with different Cd compositions were post-annealed to control the Hg vacancy concentration. Then temperature-dependent Hall measurements and photoluminescence measurements allowed us to study the evolution of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::107a6dec29a56eae1dc94e9b3b22f19d
https://doi.org/10.1063/1.4840895

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Arsenic complexes optical signatures in As-doped HgCdTe

Autor: F. Gemain, Stéphane Brochen, P. Ballet, Guy Feuillet, I. C. Robin, O. Gravrand

Publikováno v: Applied Physics Letters. 102:142104

In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8bfd01a1faad520a9f4b94b30e704ef
https://doi.org/10.1063/1.4801500

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Identification of the double acceptor levels of the mercury vacancies in HgCdTe

Autor: I. C. Robin, Stéphane Brochen, M. De Vita, Alain Lusson, F. Gemain

Publikováno v: Applied Physics Letters. 98:131901

Photoluminescence and temperature-dependent Hall measurements of nonintentionally doped HgCdTe epilayers were compared. These films were grown by liquid phase epitaxy and postannealed under different conditions as follows: a p-type annealing was used

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62f9f06ab181d3ea2c34e76f9c60cee0
https://doi.org/10.1063/1.3570637

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