Zobrazeno 1 - 4
of 4
pro vyhledávání: '"F. G. Kuper"'
Publikováno v:
Journal of Applied Physics, 60(3), 985-990. AMER INST PHYSICS
Kinetics of dry oxidation of silicon after implantation of fluorine in the oxide layer are investigated. It appeared that implanted fluorine can result in negative values of the linear oxidation rate constant. Fluorine profiles obtained by the nuclea
Publikováno v:
Review of Scientific Instruments. 53:1058-1060
A differential reflectometer is described which is capable of measuring reflectivity variations down to 0.05% of those very small fractions (10−2–10−3) of the illuminated surface that are of interest, i.e., atomically stepped parts of rough or
Publikováno v:
Journal of Applied Physics, 61(12), 5475-5477. AMER INST PHYSICS
The direct electron‐beam‐induced current (EBIC) observation of electrical properties of grain boundaries in silicon‐on‐insulator (SOI) structures has always been hampered by the insulated structure to be measured. In this communication a new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32426bc8d7d0dd24cbc1b276e4ba1344
https://research.rug.nl/en/publications/981b7409-473a-49fc-bea3-9b55e8274a41
https://research.rug.nl/en/publications/981b7409-473a-49fc-bea3-9b55e8274a41