Zobrazeno 1 - 10
of 21
pro vyhledávání: '"F. G. Kellert"'
Autor:
T. E. Shirley, R. E. Yeats, F. G. Kellert, T.S. Low, D.C. D'Avanzo, M. Bonse, M. Iwamoto, M.E. Adamski, D. K. Kuhn, R. L. Shimon, K. W. Alt, C.P. Hutchinson
Publikováno v:
Microelectronics Reliability. 47:1175-1179
A novel circuit for measuring the infant mortality rate in InGaP/GaAs HBT Technology is presented. The circuit allows reliability stressing to be performed on as many as 100,000 transistors per wafer and is necessary in order to predict the infant ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9741d723067e6910931ddd82fff52c81
https://doi.org/10.1016/j.microrel.2007.02.007
https://doi.org/10.1016/j.microrel.2007.02.007
Publikováno v:
Journal of Electronic Materials. 21:983-987
We report on the control of zinc in organometallic vapor phase epitaxial (OMVPE) grown InP:Zn/InGaAs/InPp- i- n double heterojunctions with InGaAs:Zn contacting layers. As a function of diethylzinc (DEZn) flow, we measure net acceptor concentrations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3335259548b8d838c3fa7a8ea9ce7c4e
https://doi.org/10.1007/bf02684207
https://doi.org/10.1007/bf02684207
Autor:
B. Yeats, R. L. Shimon, T. E. Shirley, D. K. Kuhn, K. W. Alt, F. G. Kellert, D.C. D'Avanzo, T.S. Low, C.P. Hutchinson, M. Bonse, M.E. Adamski, M. Iwamoto, Martin W. Dvorak
Publikováno v:
2008 IEEE Compound Semiconductor Integrated Circuits Symposium.
We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32cc81cd8050d0231b836d0fd4910bf2
https://doi.org/10.1109/csics.2008.14
https://doi.org/10.1109/csics.2008.14
Autor:
R. L. Shimon, D.C. D'Avanzo, M. Iwamoto, B. C. Gierhart, F. G. Kellert, C.P. Hutchinson, M. Bonse, K. W. Alt, R. E. Yeats, T. E. Shirley
Publikováno v:
2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop].
A novel circuit for measuring current gain, β on wafer for a very large number of individual transistors in InGaP/GaAs HBT Technology is presented. The circuit allows for accurately measuring β for as many as 25,000 individual transistors on a sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b0fbc87e44018cf91d64b839ba6dbb5
https://doi.org/10.1109/rocs.2008.5483621
https://doi.org/10.1109/rocs.2008.5483621
Publikováno v:
Journal of Electronic Materials. 19:1425-1428
For organometallic vapor phase epitaxial (OMVPE) grown InP, the change in lattice constant is measured as a function of tellurium (Te) dopant concentration. We observe ~0.15% dilation in the InP lattice constant at a Te concentration of ~1020 cm-3. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b29ff20b614fd7b597bedff6697e073
https://doi.org/10.1007/bf02662833
https://doi.org/10.1007/bf02662833
Autor:
K. T. Chan, F. G. Kellert
Publikováno v:
Journal of Electronic Materials. 19:311-315
We have successfully grown bulk In0.53Ga0.47As on InP using tertiarybutylarsine (TBA), trimethylindium and trimethylgallium. The growth temperature was 602° and the V/III ratio ranged from 19 to 38. Net carrier concentrations were 2 – 4 × 1015 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37b43470c0fc4d96c5e5effc1482c9a
https://doi.org/10.1007/bf02651290
https://doi.org/10.1007/bf02651290
Autor:
T.S. Low, D.C. D'Avanzo, T. E. Shirley, D. K. Kuhn, K. W. Alt, M. Bonse, C.P. Hutchinson, M. Iwamoto, R. L. Shimon, F. G. Kellert, M.E. Adamski, R. E. Yeats
Publikováno v:
[Reliability of Compound Semiconductors] ROCS Workshop 2006.
A novel circuit for measuring the infant mortality rate in InGaP/GaAs HBT Technology is presented. The circuit allows reliability stressing to be performed on as many as 100,000 transistors per wafer and is necessary in order to predict the infant ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e1464d3a0823471c12958fbfaa1e86d
https://doi.org/10.1109/rocs.2006.323410
https://doi.org/10.1109/rocs.2006.323410
Autor:
N. Moll, Ben Keppeler, R. E. Yeats, M.K. Culver, J. Hadley, G.K. Essilfie, M. Farhoud, Eric R. Ehlers, F. G. Kellert, J.S.C. Chang, S.R. Bahl, D.C. D'Avanzo, T. E. Shirley, T.S. Low, Martin W. Dvorak, G. Patterson, M. Iwamoto, M.E. Adamski, Timothy Engel, C.P. Hutchinson
Publikováno v:
IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..
A high performance GaAsSb base, InP collector DHBT IC process has been developed for RF, microwave and telecommunications instrumentation. The GaAsSb process achieves f/sub T/ and f/sub max/ values of 185 GHz and 220 GHz respectively, at operating cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c0c64129fa9b95707f5a7d94eaa0c5e
https://doi.org/10.1109/csics.2005.1531760
https://doi.org/10.1109/csics.2005.1531760
Publikováno v:
Applied Physics Letters. 67:834-836
The subgap optical absorption of GaAs layers grown by low temperature molecular beam epitaxy is measured by photothermal deflection spectroscopy (PDS). The absorption increases as the growth temperature decreases at a fixed wavelength. Defect densiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c416ad6bee65ffb9454f8d519f7928fc
https://doi.org/10.1063/1.115459
https://doi.org/10.1063/1.115459
Autor:
G. W. Foltz, F. G. Kellert, G. F. Hildebrandt, R. F. Stebbings, K. A. Smith, F. B. Dunning, W. P. West, C. J. Latimer
Publikováno v:
The Journal of Chemical Physics. 67:1352-1359
Ionization of xenon atoms in single highly excited states ‖nf≳ (where 25⩽n⩽40) by collisions with CCl4, CCl3F, and SF6 has been investigated. Absolute rate constants for Xe+ production are reported together with the identities of the major ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4814fe144c205167ed3fc6702c9ad07
https://doi.org/10.1063/1.435034
https://doi.org/10.1063/1.435034