Zobrazeno 1 - 10
of 19
pro vyhledávání: '"F. G. Celii"'
Autor:
Xuefeng Hua, P. Jiang, Li Ling, Yicheng Wang, Xi Li, Harold M. Anderson, K. H. R. Kirmse, Gottlieb S. Oehrlein, F. G. Celii
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:236-244
We have examined the effect of CO addition to C4F8 or C4F8/Ar plasmas for selective etching of organosilicate glass (OSG) over SiC etch stop layers. The variation of important gas phase species, thin film etching rates and surface chemistry with feed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64ac050be94654305b92430edcec45e1
https://doi.org/10.1116/1.1638780
https://doi.org/10.1116/1.1638780
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1708-1716
We report the effect of N2 addition to C4F8 and C4F8/Ar discharges on plasma etching rates of organosilicate glass (OSG) and etch stop layer materials (Si3N4 and SiC), and the results of surface chemistry studies performed in parallel. N2 addition ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e60d3964081f33fad181b7201abd7499
https://doi.org/10.1116/1.1598973
https://doi.org/10.1116/1.1598973
Publikováno v:
Integrated Ferroelectrics. 53:333-340
We discuss in this paper our motivations for implementing the high wafer temperature plasma etching of Ferroelectric films. We present results of our work at high wafer temperature. We present details showing an effective combination of the capabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c72434808cc964b59fedafe7774b2e
https://doi.org/10.1080/714040682
https://doi.org/10.1080/714040682
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:2483-2489
We report on the characterization of silicon-rich nitride (SRN) and silicon-rich oxynitride (SRON) films used in poly-Si gate patterning. SRON and SRN films were deposited by plasma-enhanced chemical vapor deposition in a commercial 200 mm reactor. F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d723df5b03fe9c7e32c57d118515a9c
https://doi.org/10.1116/1.1388624
https://doi.org/10.1116/1.1388624
Autor:
B. Johs, Yung-Chung Kao, F. G. Celii, Huade Yao, Craig M. Herzinger, Paul G. Snyder, John A. Woollam
Publikováno v:
Journal of Applied Physics. 77:4677-4687
Using variable angle spectroscopic ellipsometry, optical constants for AlAs (1.4–5.0 eV) are presented which are simultaneously compatible with measured data from four different samples. The below‐gap index values are compatible with published pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea19b466755628e1371589118474cb1f
https://doi.org/10.1063/1.359435
https://doi.org/10.1063/1.359435
Publikováno v:
Thin Solid Films. 212:140-149
The use of low pressure and high gas flow conditions in a microwave plasma diamond chemical vapor deposition reactor resulted in films with small grain size and with a (110) preferred orientation on silicon substrates. The diamond films were deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9932043084abbdebb6204d720a342fe
https://doi.org/10.1016/0040-6090(92)90512-a
https://doi.org/10.1016/0040-6090(92)90512-a
Autor:
F. G. Celii, J. E. Butler
Publikováno v:
Journal of Applied Physics. 71:2877-2883
The technique of resonance‐enhanced multiphoton ionization (REMPI) was used to determine relative density distributions of gas‐phase methyl radical (CH3) in a filament‐assisted diamond chemical vapor deposition reactor. The dependences of CH3 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd689218d59765b30a63fb6f8fd74cbe
https://doi.org/10.1063/1.351019
https://doi.org/10.1063/1.351019
Publikováno v:
Journal of Applied Physics. 70:5636-5646
We have investigated the effects of reactant residence time on the properties of microwave‐assisted chemical vapor deposited diamond films. Using a constant gas pressure of 40 Torr and gas composition of 1% CH4 in H2, the total gas flow rate was ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58542361b117a5a15a9a6d6bb35a48bc
https://doi.org/10.1063/1.350179
https://doi.org/10.1063/1.350179
Autor:
James E. Butler, F. G. Celii
Publikováno v:
Annual Review of Physical Chemistry. 42:643-684
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fdf7d8335e513da616ea12fa4ff9f8c
https://doi.org/10.1146/annurev.pc.42.100191.003235
https://doi.org/10.1146/annurev.pc.42.100191.003235
Publikováno v:
Journal of Applied Physics. 68:3814-3817
Third‐harmonic generation (THG) was used to monitor ground‐state atomic hydrogen H(1s 2S1/2) in a dc plasma system. A 364.6 nm laser beam focused through H2 or CH4/H2 plasmas induced THG at 121.5 nm, near the atomic hydrogen 2p 2PoJ→1s 2S1/2 Ly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ac949fb839dcaa1060230fe39b3928e
https://doi.org/10.1063/1.346263
https://doi.org/10.1063/1.346263