Zobrazeno 1 - 10
of 20
pro vyhledávání: '"F. Flores Gracia"'
Autor:
J. A. Luna López, A. Benítez Lara, A. Morales Sánchez, A. D. Hernández-de la Luz, D. E. Vázquez Valerdi, G. García Salgado, Miguel A. Dominguez, F. Flores Gracia
Publikováno v:
Journal of Electronic Materials. 46:2309-2322
In this work, the effect of hydrogen flow and thermal annealing on the compositional and optical properties of non-stoichiometric silicon oxide (SiOx) films with embedded silicon nanocrystals is reported. The SiO x films are obtained by hot filament
Autor:
Godofredo Garcia Salgado, D. E. Vázquez Valerdi, A. D. Hernández de la Luz, Z. J. Hernández Simón, G. Mendoza Conde, J. A. Luna López, A. Morales Sánchez, F. Flores Gracia, Miguel A. Dominguez
Publikováno v:
Procedia Engineering. 168:1296-1299
Actually, optical and electrical characteristics of the SiOx films need to be understood in order to improve and propose optoelectronics devices. Non-stoichiometric silicon oxide (SiOx) films with embedded silicon nanocrystals (Si-ncs) were obtained
Autor:
Ciro Falcony, Carlos Domínguez, N. D. Espinosa-Torres, A. A. González-Fernández, A. Morales, G. Pedraza, F. Flores-Gracia, R. López-Estopier, Mariano Aceves-Mijares, S. Roman-Lopez
Publikováno v:
Surface and Interface Analysis. 46:216-223
Autor:
J. Carrillo-López, Dianeli E. Vázquez-Valerdi, Jose A. Luna-Lopez, F. Flores Gracia, A. Ponce-Pedraza, G. García-Salgado, Alfredo Morales-Sánchez, T. Díaz-Becerril
Publikováno v:
Solid State Phenomena. 194:204-208
The structural and optical properties of Si nanocrystal (Si-nc) embedded in a matrix of off-stoichiometric silicon oxide (SiOx, xx films, which involve SiOx defects and quantum confinement effects.
Autor:
J. Tepal-Prisco, R. Silva-González, E. Sánchez-Mora, Estela Gómez-Barojas, O. López-Hernández, F. Flores-Gracia
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 26:2219-2222
Porous silicon layers have been prepared from non-polished p-type silicon wafers of (100) orientation. Scanning electron microscopy and fluorescence spectroscopy have been used to characterize the morphological and optical properties of porous silico
Publikováno v:
Materials Characterization. 58:829-833
Electronic conduction studies have been carried out on evaporated tin- and silicon-phthalocyanine thin films. The samples showed carrier excitation via a field-lowering mechanism with a log Jα˙V 1/2 plot and the current density-voltage ( J – V )
Autor:
J. A. Luna López, J. L. Sosa Sánchez, S. Granillo Martínez, J. Carrillo López, J. F. Flores Gracia, J. Martínez-Juárez, D. Hernández de la Luz, N. D. Espinosa-Torres, K. Monfil Leyva
Publikováno v:
Benemérita Universidad Autónoma de Puebla
BUAP
Redalyc-BUAP
BUAP
Redalyc-BUAP
n this study a sandwich-type octa-substituted Erbium (III) bis-phthalocyanine compound of increased solubility was synthetized from a metal free phthalocyanine with the same substitution pattern using strictly dry reaction conditions. Then the pure p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::97b47dd47ab66b2ae10b9047afde7d0c
http://www.redalyc.org/articulo.oa?id=94235742001
http://www.redalyc.org/articulo.oa?id=94235742001
Publikováno v:
Modern Physics Letters B. 15:704-707
The objective of this work is to investigate the origin of the emission bands of Photo and Cathodo - luminescence (PL, CL) in thermal silicon dioxide films implanted with Silicon. The films were obtained by 150 KeV Si implantation into thennal oxide,
Autor:
J. Alberto Luna López, T. Díaz-Becerril, Godofredo Garcia Salgado, D. E. Vázquez Valerdi, F. Flores Gracia, J. Carrillo López, A. Ponce Pedraza
Publikováno v:
Nanoscale Research Letters
Structural, compositional, morphological, and optical properties of silicon nanocrystal (Si-nc) embedded in a matrix of non-stoichiometric silicon oxide (SiOx) films were studied. SiOx films were prepared by hot filament chemical vapor deposition tec
Publikováno v:
Benemérita Universidad Autónoma de Puebla
BUAP
Redalyc-BUAP
BUAP
Redalyc-BUAP
Silicon rich oxide films (SRO)were obtained by silicon implantation in silicon dioxide and PE LPCVD techniques. Also, PECVD and LPCVD SRO films were implanted with silicon to get super enriched SRO. Photo- and Cathodo Luminescence (PL and CL) st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::b03068534382ebf7d485bb2dfd66c7c4
http://www.redalyc.org/articulo.oa?id=94218202
http://www.redalyc.org/articulo.oa?id=94218202