Výsledky vyhledávání - "F. F. Malyavin"

Effect of vacuum sintering conditions on the properties of Y3Al5O12 : Ce luminescent ceramics

Autor: L. V. Tarala, A. A. Kravtsov, O. M. Chapura, V. A. Tarala, D. S. Vakalov, F. F. Malyavin, S. V. Kuznetsov, V. A. Lapin, L. V. Kozhitov, A. V. Popkova

Publikováno v: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 25:312-322

The aim of this work was to study the effect of vacuum sintering conditions and cerium concentration on the optical, luminescent and thermal properties of yttrium-aluminum garnet based ceramics doped with Се3+ cations. Series of ceramic powders wer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::076c75d4a8d4ab6b20476f50762f916b
https://doi.org/10.17073/1609-3577-2022-4-312-322

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Akademický článek

The influence of the substrate temperature change character during the growth on the topology of the Ge/Si(100) film surface

Autor: L S Lunin, M D Bavizhev, I A Sysoev, V A Lapin, D S Kuleshov, F F Malyavin

Publikováno v: RUDN Journal of Engineering Research, Vol 0, Iss 3, Pp 98-103 (2012)

The possibility of roughness reducing of the Ge/Si (100) film using low-temperature layer of Ge (LT-Ge) has been investigated. It was shown that the substrate temperature change character during the growth process influences on the surface morphology

Externí odkaz: https://doaj.org/article/3cf0278cb42143d99805df46ea441f99

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Dependence of the surface topology and raman scattering spectra of Ge x Si1−x /Si films on the composition variation over the layer thickness

Autor: M. D. Bavizhev, F. F. Malyavin, V. A. Lapin, I. A. Sysoev, L. S. Lunin, D.S. Kuleshov

Publikováno v: Crystallography Reports. 58:509-512

The surface topology and Raman scattering spectra of GexSi1 − x/Si(100) films are investigated in dependence of the composition variation over the film thickness. It is shown that the character of the Ge content variation in the GexSi1 − x alloy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f05a3ac8befae2f57a31effd5c6c0f25
https://doi.org/10.1134/s1063774513030127

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Investigation of the peculiarities of Ge island growth on Si (100) under MBE conditions

Autor: I. A. Sysoev, F. F. Malyavin, M. D. Bavizhev, V. A. Lapin, B. M. Sinel’nikov, D.S. Kuleshov

Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:493-496

The results of investigating the features of Ge-island formation on Si (100) under conditions of molecular-beam epitaxy is presented. Nanosized structures at heteroboundaries (islets and quantum dots) are attracting great interest due to new useful p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e29b9b3a8daad0519564aca9324f89fb
https://doi.org/10.1134/s1027451013030075

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