Zobrazeno 1 - 10
of 21
pro vyhledávání: '"F. Essely"'
Autor:
M. Gaillardin, Marty R. Shaneyfelt, F. Essely, V.F. Cavrois, Vincent Pouget, Joseph S. Melinger, Dale McMorrow, N. Fel, P. Paillet, Daisuke Kobayashi, J.R. Schwank, Richard S. Flores, Olivier Duhamel, Paul E. Dodd
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.2842-2853
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.2842-2853
IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.2842-2853
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.2842-2853
The propagation of single event transients (SET) is measured and modeled in SOI and bulk inverter chains. The propagation-induced pulse broadening (PIPB) effect is shown to determine the SET pulse width measured at the output of long chains of invert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a24bd79a1ed5719e68a64fcfae1288f
https://doi.org/10.1109/tns.2008.2007724
https://doi.org/10.1109/tns.2008.2007724
Autor:
Philippe C. Adell, B. Conder, Vincent Pouget, Jamie S. Laird, Farokh Irom, T.F. Miyahira, F. Essely
Publikováno v:
IEEE Transactions on Nuclear Science. 55:3352-3359
Single-event transients (SETs) from heavy ions and laser beam are investigated for two positive adjustable linear voltage regulators: the RH117 from linear technology and the HS-117RH from Intersil. Both positive and negative going transients are obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a86857abfdfe0b2c71783ea0d029d4e
https://doi.org/10.1109/tns.2008.2007800
https://doi.org/10.1109/tns.2008.2007800
Autor:
Dean Lewis, Gérald Haller, Philippe Perdu, Pascal Fouillat, F. Essely, V. Goubier, Aziz Machouat, Vincent Pouget
Publikováno v:
Microelectronics Reliability. 48:1333-1338
Dynamic laser stimulation (DLS) techniques based on operating integrated circuits (ICs) become a standard failure analysis technique for soft defect localization. This type of defect is getting more and more common with advanced technology; therefore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0eba0a25562bb9273cb407d06f5c749
https://doi.org/10.1016/j.microrel.2008.07.043
https://doi.org/10.1016/j.microrel.2008.07.043
Autor:
Philippe Perdu, Vincent Pouget, Nicolas Guitard, Andre Touboul, David Trémouilles, Dean Lewis, Nicolas Nolhier, F. Essely, Marise Bafleur
Publikováno v:
Microelectronics Reliability. 45:1415-1420
The failure signatures of a grounded-base NPN bipolar ESD protection under multiple TLP and HBM stresses are analyzed. For this particular device having a graded collector region, multiple TLP or HBM stresses result in different types of defects. OBI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2ca853dd2a9928753f0616055a9c03
https://doi.org/10.1016/j.microrel.2005.07.030
https://doi.org/10.1016/j.microrel.2005.07.030
Autor:
F. Essely, D. Lewis, V. Goubier, Philippe Perdu, Aziz Machouat, Vincent Pouget, Gérald Haller
The optical IR-OBIRCh technique is a standard failure analysis tool used to localize defects that are located at interconnects layers levels. For a functional logic failure, a failing test pattern is used to condition the device into a particular log
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ea8250ad1ab72795ab72d77c031c2e2
https://hal.archives-ouvertes.fr/hal-00670058
https://hal.archives-ouvertes.fr/hal-00670058
Autor:
Alain Portavoce, F. Essely, N. Rodriguez, Christophe Girardeaux, Gérald Haller, Catherine Grosjean, Jérôme Adrian
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2007, 47 (9-11), pp.1599-1603
Microelectronics Reliability, Elsevier, 2007, 47 (9-11), pp.1599-1603. ⟨10.1016/j.microrel.2007.07.091⟩
Microelectronics Reliability, 2007, 47 (9-11), pp.1599-1603. ⟨10.1016/j.microrel.2007.07.091⟩
Microelectronics Reliability, Elsevier, 2007, 47 (9-11), pp.1599-1603
Microelectronics Reliability, Elsevier, 2007, 47 (9-11), pp.1599-1603. ⟨10.1016/j.microrel.2007.07.091⟩
Microelectronics Reliability, 2007, 47 (9-11), pp.1599-1603. ⟨10.1016/j.microrel.2007.07.091⟩
In microelectronics, the size of the components is continuously decreasing and is now in deep submicron range. Therefore, the dimensions of the implant profile become a major issue. Indeed, a slight fluctuation of the profile could be the origin of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eee3fe28e0abde8d02d3f03ce5264354
https://hal-amu.archives-ouvertes.fr/hal-02044994
https://hal-amu.archives-ouvertes.fr/hal-02044994
Autor:
Mustapha Remmach, Frédéric Darracq, F. Essely, Vincent Pouget, Felix Beaudoin, Marise Bafleur, Philippe Perdu, Nicolas Guitard, Andre Touboul, Dean Lewis
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2006, 46 (9-11), pp.1563-1568, 10.1016/j.microrel.2006.07.021. ⟨10.1016/j.microrel.2006.07.021⟩
Microelectronics Reliability, 2006, 46 (9-11), pp.1563-1568, 10.1016/j.microrel.2006.07.021. ⟨10.1016/j.microrel.2006.07.021⟩
Microelectronics Reliability, Elsevier, 2006, 46 (9-11), pp.1563-1568, 10.1016/j.microrel.2006.07.021. ⟨10.1016/j.microrel.2006.07.021⟩
Microelectronics Reliability, 2006, 46 (9-11), pp.1563-1568, 10.1016/j.microrel.2006.07.021. ⟨10.1016/j.microrel.2006.07.021⟩
International audience; Various optical defect localization techniques are applied on the same integrated circuits (IC). These circuits were previously stressed by Electro Static Discharges (ESD) to create defects. The results obtained by each techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93fdcea72497f40ca83ab72e1b6677f9
https://hal.archives-ouvertes.fr/hal-00204570
https://hal.archives-ouvertes.fr/hal-00204570
Autor:
Andre Touboul, Dean Lewis, Nicolas Guitard, Marise Bafleur, F. Essely, Frédéric Darracq, Vincent Pouget, Philippe Perdu
Publikováno v:
Proceedings of the 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2006, Singapour, Singapore. pp.270-275, 10.1109/IPFA.2006.251044, ⟨10.1109/IPFA.2006.251044⟩
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2007, 7 (4), pp.617-624
IEEE Transactions on Device and Materials Reliability, 2007, 7 (4), pp.617-624
13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2006, Singapour, Singapore. pp.270-275, 10.1109/IPFA.2006.251044, ⟨10.1109/IPFA.2006.251044⟩
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2007, 7 (4), pp.617-624
IEEE Transactions on Device and Materials Reliability, 2007, 7 (4), pp.617-624
The evolution of laser sources has led to the advent of new laser-based techniques for failure analysis. The pulsed OBIC (optical beam induced current) technique is one of them, which is based on the photoelectric laser stimulation of the device unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d46903cdff6aa67fa6c409c2e717c7c1
https://hal.archives-ouvertes.fr/hal-00204574
https://hal.archives-ouvertes.fr/hal-00204574
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Akademický článek
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