Zobrazeno 1 - 10
of 66
pro vyhledávání: '"F. Ernult"'
Autor:
A. L. Gonzalez Oyarce, Chee Kwan Gan, Michael Tran, Anjan Soumyanarayanan, F. Ernult, Khoong Hong Khoo, Alexander Paul Petrović, M. Raju, Anthony K. C. Tan, Christos Panagopoulos, Mi-Young Im, Pin Ho
Publikováno v:
Nature materials, vol 16, iss 9
Soumyanarayanan, A; Raju, M; Oyarce, ALG; Tan, AKC; Im, MY; Petrovic, AP; et al.(2017). Tunable room-temperature magnetic skyrmions in Ir/Fe/Co/Pt multilayers. Nature Materials, 16(9), 898-904. doi: 10.1038/NMAT4934. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/6zd5p5z4
Soumyanarayanan, A; Raju, M; Oyarce, ALG; Tan, AKC; Im, MY; Petrovic, AP; et al.(2017). Tunable room-temperature magnetic skyrmions in Ir/Fe/Co/Pt multilayers. Nature Materials, 16(9), 898-904. doi: 10.1038/NMAT4934. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/6zd5p5z4
Magnetic skyrmions are nanoscale topological spin structures offering great promise for next-generation information storage technologies. The recent discovery of sub-100 nm room temperature (RT) skyrmions in several multilayer films has triggered vig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::963714bceca16dcb64f42fdb37db8ad4
https://escholarship.org/uc/item/6zd5p5z4
https://escholarship.org/uc/item/6zd5p5z4
Publikováno v:
Journal of Physics D: Applied Physics. 40:1242-1246
MgO-barrier-based magnetic double tunnel junctions including Au or Cr nanoparticles were prepared by molecular beam epitaxy, and their magnetotransport properties were investigated. A double junction sample including Au nanoparticles showed the Coulo
Autor:
F. Ernult, E. K. Chua, E. G. Yeo, Kian Guan Lim, C. C. Yeap, Weijie Wang, M. H. Li, Leong Tat Law
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
GeTe phase change material doped with 12 to 22 atomic percent TiO 2 were deposited and characterized. The crystallization of amorphous doped GeTe is inhibited by the incorporation of TiO 2 dopant up to 22 % as depicted by the increasing activation en
Publikováno v:
Phase Transitions. 79:717-726
The study of spin-dependent single electron tunneling requires the preparation of particles with a nanometric size. These particles need not be ferromagnetic if the electrodes are. In order to fulfill the requirements of single electron tunneling eff
Publikováno v:
Journal of Applied Physics. 94:6678-6682
We experimentally investigated the influence of the location of nonmagnetic impurities (Au) inserted in the NiO layer of NiO/Co bilayers on the exchange bias. The inserted Au layer actually consists of a discontinuous plane of Au islands leading to l
Publikováno v:
Science and Technology of Advanced Materials. 4:383-389
We studied the preparation of nanometer-sized magnetic dots on MgO tunnel barriers. The samples were formed by depositing Fe thin layers, which exhibited a 3D Volmer–Weber growth on MgO (001) substrates. The current–voltage characteristics were t
Autor:
B. Dieny, Jérôme Moritz, J. Carnarero, Bernard Rodmacq, Yan Pennec, Stefania Pizzini, F. Ernult, Flávio Garcia, Jan Vogel, Stéphane Auffret
Publikováno v:
IEEE Transactions on Magnetics. 38:2730-2735
Sputtered (Pt-Co)/sub n/-FeMn multilayers exhibit both perpendicular magnetic anisotropy and exchange bias at room temperature. Their magnetic properties after in-plane and perpendicular-to-plane magnetic annealing have been studied by means of extra
Publikováno v:
The European Physical Journal B. 25:177-189
Discontinuous magnetic metal/insulator multilayers are formed of equally spaced layers of magnetic particles embedded in an insulating matrix. Their electronic transport properties result from spin-polarized electron tunneling and Coulomb blockade ef
Publikováno v:
Journal of Applied Physics. 91:1436-1443
Bottom and top spin-valves comprising NiO as pinning layer were prepared by depositing the NiO layer either at normal or oblique incidence onto Si/SiO2 substrates. When the NiO layer is deposited at oblique incidence, a strong uniaxial anisotropy is
Autor:
M. H. Li, Weijie Wang, C. C. Yeap, E. K. Chua, Leong Tat Law, F. Ernult, Kian Guan Lim, E. G. Yeo
Publikováno v:
2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).
Varying ZrO 2 doped GeTe phase change material of atomic percent greater than 10% were deposited and characterized. It was discovered that the crystallization of amorphous doped GeTe is suppressed by the incorporation of ZrO 2 at lower concentration