Zobrazeno 1 - 10
of 39
pro vyhledávání: '"F. Ermanis"'
Publikováno v:
Journal of The Electrochemical Society. 123:1089-1097
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80e093e6c767659d696cd2b1bbcf3346
https://doi.org/10.1149/1.2133002
https://doi.org/10.1149/1.2133002
Publikováno v:
Journal of Crystal Growth. 58:95-102
Epitaxial films of YLuBiLG have been grown on various substrates from both pure Bi 2 O 3 and PbO−Bi 2 O 3 mixed flux. Using lattice constants and Curie temperature measurements, the Bi content of these films was determined and correlated with the g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c39054d104c3a4be627b5f009543d9
https://doi.org/10.1016/0022-0248(82)90214-7
https://doi.org/10.1016/0022-0248(82)90214-7
Publikováno v:
Journal of Crystal Growth. 73:311-315
During vapor phase epitaxy, PH3 is generally used to preserve InP substrates. While PH3 is effective in reducing thermal decomposition, we find that excessive PH3 can produce morphological imperfections on the substrate surface. It is shown that in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e5fcb7272af30182d4b32d08d2e9159
https://doi.org/10.1016/0022-0248(85)90307-0
https://doi.org/10.1016/0022-0248(85)90307-0
Publikováno v:
Journal of Applied Physics. 55:1596-1606
In order to understand the irreversible failure mechanisms of planar InGaAs p‐i‐n photodiodes, 32 devices from 19 different wafers that shorted during aging were first examined in the scanning electron microscope. Included were devices that faile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9b0f11999c94eeac126de42b30e76e1
https://doi.org/10.1063/1.333420
https://doi.org/10.1063/1.333420
Publikováno v:
IEEE Transactions on Electron Devices. 30:304-310
In this paper, the formation of dark spot defects (DSD's) in InP/InGaAsP LED's is studied by cathodoluminescence (CL) imaging, electron-beam-induced-current (EBIC) imaging, Auger electron spectroscopy (AES), and energy dispersive X-ray spectroscopy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6bc60c82ac88610980eae439a81fe1d
https://doi.org/10.1109/t-ed.1983.21121
https://doi.org/10.1109/t-ed.1983.21121
Autor:
T. J. Leonard, R. J. Roedel, A. K. Chin, V. G. Keramidas, W. C. King, C. L. Zipfel, F. Ermanis
Publikováno v:
Journal of The Electrochemical Society. 128:661-669
Homojunction, graded bandgap LED's have been demonstrated to be highly reliable. During accelerated aging (30 mA forward bias, 250°C), these LED's generally degrade slowly without the formation of dark lines or dark spots. It has recently been found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e96ba312444dcab79892a35eabafaf7c
https://doi.org/10.1149/1.2127477
https://doi.org/10.1149/1.2127477
Publikováno v:
Journal of The Electrochemical Society. 129:2585-2590
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68caf108a0d118567dbde09875913478
https://doi.org/10.1149/1.2123615
https://doi.org/10.1149/1.2123615
Autor:
K. Wolfstirn, F. Ermanis
Publikováno v:
Journal of Applied Physics. 37:1963-1966
The Hall effect and resistivity of GaAs doped with zinc to a concentration range 1×1017 to 1×1019 zinc atoms/cm3, were measured as a function of temperature from 4° to 750°K. The electrical data are correlated with zinc concentration determined b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f55fd0cd5b053638a2b71122aa746a
https://doi.org/10.1063/1.1708648
https://doi.org/10.1063/1.1708648
Publikováno v:
Journal of Applied Physics. 41:264-270
Germanium‐doped GaAs crystals were grown on GaAs seeds from Ga solution. The properties of the Ge‐doped GaAs layers were examined by Hall effect measurements from 20° to 400°K and by photoluminescence measurements between 12° and 300°K. It wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9105221d2b22973c3195b87907c070d
https://doi.org/10.1063/1.1658332
https://doi.org/10.1063/1.1658332
Publikováno v:
Journal of Applied Physics. 40:2945-2958
The resistivity and Hall coefficient RH for Zn‐doped GaP were measured at temperatures between 4.2° and 775°K. Neutron activation and through diffusion with radioactive 65Zn were used to determine the Zn concentration NZn, which ranged from 6.7×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0adb92ea6b312cb2dd57866590a5e374
https://doi.org/10.1063/1.1658106
https://doi.org/10.1063/1.1658106