Zobrazeno 1 - 10
of 28
pro vyhledávání: '"F. Emoto"'
Publikováno v:
Journal of Applied Animal Research. 29:91-96
Emoto, F., Tomonaga, S., Tachibana, T., Denbow, D.M. and Furuse, M. 2006. Effect of centrally administered sphingomyelin on food intake and HPA axis in chicks. J. Appl. Anim. Res., 29: 91–96. Sphignomyelin (SM) is an abundant lipid in myelin and it
Publikováno v:
IEEE Transactions on Electron Devices. 37:1462-1466
The technique features the use of self-implantation at two energy steps, i.e. 150 and 40 keV. The complete amorphization of the initial low-pressure chemical vapor deposition (LPCVD) polysilicon is thereby attained throughout the film. Application of
Publikováno v:
IEEE Transactions on Electron Devices. 37:121-127
The laser-recrystallization technique utilizes the connected-island structure for forming recrystallized silicon films with enlarged grain size controlled by the thermal gradient. This technique has been used to fabricate the driver circuits of small
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A 2/3-in fully integrated active-matrix LCD (liquid-crystal-display) panel with 74240 pixels has been developed by using a pixel structure where ITO electrodes in a conventional LCD panel are replaced with thin mesh polysilicon film electrodes. The u
Autor:
Yasuhiro Uemoto, Gota Kano, A. Nakamura, T. Kamimura, K. Senda, F. Emoto, A. Yamamoto, E. Fujii
Publikováno v:
Technical Digest., International Electron Devices Meeting.
The authors demonstrate a very small active-matrix LCD (liquid crystal display) panel, 21 mm*25 mm, having driver circuits on a single quartz substrate. In order to increase the channel mobility of the TFT, a novel technology for solid-phase growth o
Publikováno v:
International Technical Digest on Electron Devices.
A highly reliable poly-Si thin-film transistor (TFT) integrated driver circuit for a monolithic active-matrix LCD (liquid crystal display) panel has been developed. The lifetime of the present driver circuit has been improved to be much longer than t
Publikováno v:
IEEE Transactions on Electron Devices. 35:642-645
A CPD image sensor with an SOI (silicon-on-insulator) structure has been developed. The sensor is composed of read-out transistors fabricated on laser-recrystallized silicon, photodiodes on the seeding region, an MOS shift register, and a CCD shift r
Publikováno v:
Microelectronic Engineering. 3:17-24
Exposure spreading and nanometer pattern delineation characteristics have been investigated to explore ultimate limit of e-beam lithography in pratical samples, i.e., thick resist on bulk Si. 8 nm wide, 100 nm spaced line patterns were delineated in
Publikováno v:
1987 International Electron Devices Meeting.
A monolithic integration of the horizontal driver circuit into the LCD substrate is demonstrated. The operation frequency of the TFT driver was elevated up to 10MHz by successful use of the laser-recrystallization technique. The horizontal driver cir
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