Zobrazeno 1 - 10
of 46
pro vyhledávání: '"F. E. Prins"'
Publikováno v:
Microelectronic Engineering. :1023-1028
Single electron devices are being investigated widely for their use in logic circuits and data storage devices. Here a point of concern is the sensitivity of single electron transistors (SETs) to changing background charges, which may arise from free
Publikováno v:
Microelectronic Engineering. :989-993
We have defined Coulomb blockade structures in a highly doped poly-crystalline film on top of a SiO 2 layer using electron beam lithography and thermal oxidation. The electrical characterization at 4.2 K revealed a 8 mV wide Coulomb blockade region.
Publikováno v:
Microelectronic Engineering. :199-205
Design rules for lateral pn-junction detectors have been established and verified by numerical simulations and measurements of the detector efficiency for different geometries. The test devices were fabricated by diffusion of phosphorus into boron-do
Publikováno v:
Sensors and Actuators B: Chemical. 78:12-18
We present micromechanical cantilever sensor arrays for quantification of individual components in a gas mixture. Using selectively coated cantilevers as mass sensitive transducers, their response to the analyte molecules is obtained by measuring the
Publikováno v:
Superlattices and Microstructures. 28:429-434
The transport properties of two adjacent double dots, realized in silicon is studied by DC-measurements at a temperature of 4.2 K. From the measured charging diagrams the capacitances within the structure are estimated and using this information as i
Autor:
Dieter P. Kern, Wolfgang Göpel, F. E. Prins, M. Maute, S. Raible, Udo Weimar, B. H. Kim, M. D. Croitoru
Publikováno v:
Microelectronic Engineering. 53:229-232
Polymer coated cantilevers as mass-sensitive transducers for miniaturized gas sensors, an approach for which promising results have been demonstrated recently [1], have been developed and investigated further towards applications. A new detection arr
Publikováno v:
Journal of Applied Physics. 87:4580-4585
We present a systematic investigation of the oxidation properties of Si dots fabricated on a silicon-on-insulator (SOI) wafer. Dots with diameters varying from 9 to 81 nm were structured on a SOI wafer. These dots were oxidized in a dry oxygen atmosp
Publikováno v:
Semiconductor Science and Technology. 14:1165-1168
We have fabricated and characterized a uniformly n-doped silicon double-dot structure. The electrical behaviour could be changed between that of a multiple tunnel junction and that of a double dot by applying appropriate gate voltages. The double-dot
Publikováno v:
Sensors and Actuators B: Chemical. 58:505-511
Changes in the resonance frequency of polymer-coated cantilevers due to gas absorption is shown to be a promising detection mechanism for gases. We prepared SiN x cantilevers based on micromachined Si wafers and used polydimethylsiloxane (PDMS) as po
Publikováno v:
Microelectronic Engineering. 46:439-442
We have fabricated SiN"x cantilevers which can be used for applications as miniaturized gas sensors. Cantilevers were coated with polydimethylsiloxane as a chemically sensitive layer and the additional mass loading by the absorption of gas molecules