Zobrazeno 1 - 10
of 11
pro vyhledávání: '"F. E. Peterkin"'
Publikováno v:
Review of Scientific Instruments. 71:23-26
We present and demonstrate a method for balancing the two paths of a two-photon interferometer of the Hong-Ou-Mandel (HOM) variety. This method removes the difficulties of balancing the paths in this type of interferometer where a type-I crystal is u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1240fe320f4269ad4faf47b804f2da3
https://doi.org/10.1063/1.1150154
https://doi.org/10.1063/1.1150154
Autor:
T. Ridolfi, P. F. Williams, L. L. Buresh, B.L. Thomas, D.K. Scott, F. E. Peterkin, William C. Nunnally, B.J. Hankla
Publikováno v:
IEEE Transactions on Electron Devices. 37:2459-2465
Empirical information about surface flashover of silicon in a vacuum ambient which shows that in breakdown the current is carried primarily inside the semiconductor is presented. This observation shows that the physical processes responsible for flas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::057a009251bd8ab0fcd79ffa23ba9a72
https://doi.org/10.1109/16.64518
https://doi.org/10.1109/16.64518
Publikováno v:
Ninth IEEE International Pulsed Power Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3faff2c6979196f6140978209ab767a
https://doi.org/10.1109/ppc.1993.514010
https://doi.org/10.1109/ppc.1993.514010
Publikováno v:
Applied Physics Letters. 67:3942-3944
We present Schlieren images which show the existence and evolution of current filaments during the very early stages of surface‐related breakdown inside 1 cm silicon p+‐n−‐n+ structures. These images confirm our previous finding that breakdow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abd51dbc0f5d6c0b60472ca7d45f6ede
https://doi.org/10.1063/1.114412
https://doi.org/10.1063/1.114412
Publikováno v:
Applied Physics Letters. 62:2236-2238
Semiconductors such as silicon and GaAs appear attractive for use in high voltage devices because of their high bulk dielectric strength. Typically, however, such devices fail at a voltage well below that expected due to a poorly understood, surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e675b5bb0431e6e09078b40b3fa3e0cf
https://doi.org/10.1063/1.109427
https://doi.org/10.1063/1.109427
Publikováno v:
SPIE Proceedings.
We present the results of empirical studies of the breakdown of p+-i-n+, n+-i-n+, and p+-i-p+ silicon structures with approximately 1 cm long intrinsic regions. These results show that the contacts have a strong effect on the breakdown characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::061a30d31a02b08e00fee4eb9e54f80b
https://doi.org/10.1117/12.146564
https://doi.org/10.1117/12.146564
Publikováno v:
SPIE Proceedings.
We present high-speed shutter and streak photographs synchronized with sample current measure- ments which show clearly that in surface flashover of silicon in a vacuum ambient the current flows pri-manly in the silicon, not in the ambient. We presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db4a1ce6cc36f5ec6a2d5be5475b30a4
https://doi.org/10.1117/12.25056
https://doi.org/10.1117/12.25056
Autor:
P. F. Williams, F. E. Peterkin
Publikováno v:
Physics and Applications of Pseudosparks ISBN: 9781461366874
We have obtained streak and high speed shutter photographs of streamers in a trigatron spark gap filled with N2 at roughly atmospheric pressure. The streamers are initiated in the high field region surrounding the trigger pin, and propagate across th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63375f44a4964ce42a0e82152812e572
https://doi.org/10.1007/978-1-4615-3786-1_10
https://doi.org/10.1007/978-1-4615-3786-1_10
Autor:
P. F. Williams, F. E. Peterkin
Publikováno v:
Gas Discharge Closing Switches ISBN: 9781489921321
The trigatron spark gap was first described by Craggs et al., (1946). Since that time, the device has found wide application as a demand triggered, high voltage switch. In separate applications, trigatrons have been used to switch voltages ranging be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e7e91db5924ff575e4c986a73e8b93
https://doi.org/10.1007/978-1-4899-2130-7_4
https://doi.org/10.1007/978-1-4899-2130-7_4
Autor:
P. F. Williams, F. E. Peterkin
Publikováno v:
Journal of Applied Physics. 66:4163-4175
The trigatron has been in widespread use as a demand‐triggered, high‐voltage switch for more than 40 years. In spite of the popularity and maturity of the technology, there persists an uncertainty over the basic physical mechanism(s) responsible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a3b5a129fdaf0d7eb923eaddf0778dd
https://doi.org/10.1063/1.344001
https://doi.org/10.1063/1.344001