Zobrazeno 1 - 7
of 7
pro vyhledávání: '"F. E. Arkun"'
Publikováno v:
ECS Transactions. 64:163-170
The economic argument for moving compound semiconductors from their expensive native substrates to large format silicon is well established [1]. To support the economic argument “on-silicon” versions have to be able to run on depreciated fab line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc67fddfe3cb839f59a89a6f53c7240f
https://doi.org/10.1149/06407.0163ecst
https://doi.org/10.1149/06407.0163ecst
Publikováno v:
ECS Transactions. 58:243-248
Epitaxial multilayer heterostructures based on rare earth oxides serve as stress mitigating buffers for the growth of GaN on a Si (111) substrate. The process for the formation a uniform amorphous silicon dioxide layer between a silicon substrate and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff6d16e29a1b40aabf4b8adb84f1b744
https://doi.org/10.1149/05807.0243ecst
https://doi.org/10.1149/05807.0243ecst
Autor:
J. M. Zavada, E. A. Berkman, Salah M. Bedair, Nadia A. El-Masry, F. E. Arkun, M. J. Reed, M. L. Reed
Publikováno v:
Applied Physics Letters. 85:3809-3811
We report on the dependence of ferromagnetic properties of metalorganic chemical vapor deposition grown GaMnN films on carrier transfer across adjacent layers. We found that the magnetic properties of GaMnN, as a part of GaMnN∕GaN:Mg heterostructur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53ee751fd5bf2e9844e74beec8e44244
https://doi.org/10.1063/1.1810216
https://doi.org/10.1063/1.1810216
Autor:
E. A. Berkman, Amr M. Mahros, A. Emara, M. O. Luen, John F. Muth, Salah M. Bedair, X. Zhang, Nadia A. El-Masry, F. E. Arkun
Publikováno v:
MRS Proceedings. 999
Ferromagnetism (FM) in GaMnN was found to be related to the position of the Fermi level relative to the Mn deep-level band. The location of the Fermi level can be altered by doping GaMnN with Si (n-type) and Mg (p-type) dopants, resulting in a ferrom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::718a7a5b88d4882384ca82dc949bec4c
https://doi.org/10.1557/proc-0999-k06-06
https://doi.org/10.1557/proc-0999-k06-06
Autor:
Nadia A. El-Masry, Salah M. Bedair, M. Oliver Luen, M. J. Reed, F. E. Arkun, John Zavada, E. A. Berkman, M. L. Reed
Publikováno v:
MRS Proceedings. 834
The magnetic properties of GaMnN, grown by metalorganic chemical vapor deposition, depend on the addition of dopants; where undoped materials are ferromagnetic, and n -type (Si-doped) and p -type (Mg-doped) films are either ferromagnetic or paramagne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a8d7223c1a662c9fdef39f2b0281522
https://doi.org/10.1557/proc-834-j7.2
https://doi.org/10.1557/proc-834-j7.2
Autor:
Salah M. Bedair, F. E. Arkun, M. L. Reed, T. Chikyow, E. A. Berkman, Nadia A. El-Masry, M. J. Reed, J. M. Zavada
Publikováno v:
MRS Proceedings. 798
We report on the growth and magnetic properties of single crystal Mn-doped GaN, InGaN, and AlGaN films. The III-Nitride films were grown by MOCVD, while the Mn doping was performed by solid-state diffusion of a surface Mn layer deposited by pulsed la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ee0aa8cd51f47e9a9a45dff9ba28b03
https://doi.org/10.1557/proc-798-y8.6
https://doi.org/10.1557/proc-798-y8.6
Autor:
M. L. Reed, Nadia A. El-Masry, M. O. Luen, J. M. Zavada, M. J. Reed, E. A. Berkman, F. E. Arkun, Salah M. Bedair
Publikováno v:
Applied Physics Letters. 86:102504
GaMnN dilute magnetic semiconductor samples, prepared by metalorganic chemical vapor deposition, are shown to exhibit ferromagnetism or even paramagnetism depending upon the type and concentration of extrinsic impurity present in the film. In additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6afe348e778eee5fa7252ce960f578ce
https://doi.org/10.1063/1.1881786
https://doi.org/10.1063/1.1881786