Zobrazeno 1 - 10 of 184 pro vyhledávání: '"F. Dubecky"'
1
Investigation of Mg contact on SI-GaAs
Autor: Pavel Hubík, Mária Sekáčová, Pavol Boháček, Vladimír Nečas, Bohumír Zat’ko, Gabriel Vanko, A. Sagatova, F. Dubecky
Publikováno v: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).
We present an anomal current decrease for Mg contact on semi-insulating (SI) GaAs. The explanation of the observed effect is discussed within the light of the observed transport characteristics and XPS analysis.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a96f5c3e964c26cbf07b7765b831986
https://doi.org/10.1109/asdam50306.2020.9393847
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2
Particle detectors based on 4H-SiC epitaxial layer and their properties
Autor: J Arbet, A. Sagatova, Pavol Boháček, Vladimir A. Skuratov, L Hrubcin, K. Sedlackova, F. Dubecky, Mária Sekáčová, Bohumír Zat’ko, Vladimír Nečas
Publikováno v: 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles. A Schottky contact of Ni/Au of 1.4 mm in diameter was used. Current-voltage characteristics of the detector were measured and a current density lower t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::20f1d156828c132a0f9738f34bd07891
https://doi.org/10.1109/asdam.2016.7805915
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3
Investigation of Metal Contacts on Semi-Insulating GaAs: Physics, Technology and Applications
Autor: F. Dubecky, Gabriel Vanko, Pavel Hubík, Mária Sekáčová, E. Gombia, Pavol Boháček, D. Kindl, Bohumír Zat’ko
Publikováno v: 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), pp. 219–222, Smolenice, SLOVAKIA, NOV 13-16, 2016
info:cnr-pdr/source/autori:Dubecky, F.; Vanko, G.; Kindl, D.; Hubik, P.; Gombia, E.; Bohacek, P.; Sekacova, M.; Zat'ko, B./congresso_nome:11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)/congresso_luogo:Smolenice, SLOVAKIA/congresso_data:NOV 13-16, 2016/anno:2016/pagina_da:219/pagina_a:222/intervallo_pagine:219–222
The work reports on a study of the symmetric metal/SI GaAs/metal (M-S-M) diodes in order to demonstrate the effect of contact metal work function. We compare the high work function Pt contact versus the low work function Mg contact. The Pt-S-Pt, Mg-S
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f1c4dc8de15b453bf56d16169b8e932
https://publications.cnr.it/doc/401174
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4
Technology and Performance Study of a Two-Line Monolithic X- and $\gamma$-Ray Detection Chip Based on Semi-Insulating GaAs
Autor: Mária Sekáčová, F. Dubecky, J. Mudron, J. Huran, Vladimír Nečas, B. Zat'ko, Pavel Boháček
Publikováno v: IEEE Transactions on Nuclear Science. 58:3354-3358
Technology, electrical characteristics and detection performance of a novel recently developed and fabricated 64-pixel two-line array chip for detection of X- and γ -rays based on semi-insulating GaAs from three different producers are reported and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32e53084d8093e1bbea617ce3ea48a26
https://doi.org/10.1109/tns.2011.2170706
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5
Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature
Autor: B. Zat'ko, F. Dubecky
Publikováno v: IEEE Transactions on Nuclear Science. 53:625-629
This work presents the performance of a radiation detector based on LEC semi-insulating GaAs with Au/Zn Schottky contact at variable temperature. The roles of the shaping time of a linear amplifier and operating voltage were studied. The performance
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b6cbaff91cbbff886121f1b191ec1c9d
https://doi.org/10.1109/tns.2006.870446
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6
Investigation of compensation defect centres in semi-insulating InP crystals
Autor: Masayoshi Yamada, Michal Pawlowski, Pawel Kaminski, Roman Kozlowski, F. Dubecky, Masayuki Fukuzawa, Barbara Surma
Publikováno v: The European Physical Journal Applied Physics. 27:171-175
Laplace transform photoinduced transient spectroscopy (LTPITS) has been applied to study defect, centres in Fe-doped and undoped semi-insulating (SI) InP. A high resistivity (∼ 2 x 10 7 Ω cm) of the latter wins achieved by annealing at 950 °C for
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77531303f51710bc98e4a68f05b135b2
https://doi.org/10.1051/epjap:2004119-1
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8
Development of x-ray and ion diagnostics of plasma obtained with a 10-TW femtosecond laser
Autor: F. Dubecky, S. Jabłoński, L. Ryć, W Słysz, L. Dobrzanski, Marcin Rosinski, Piotr Parys
Publikováno v: Physica Scripta. 91:074008
Several x-ray and ion semiconductor detectors have been developed for the diagnostics of femtosecond laser plasma generated by a 10-TW laser which was recently commissioned for operation at the Institute of Plasma Physics and Laser Microfusion, Warsa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aeb7a5f647071f4656f6eda1a1be07aa
https://doi.org/10.1088/0031-8949/91/7/074008
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9
Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector
Autor: Carlos Granja, F. Dubecky, K. Sedlackova, A. Sagatova, Bohumír Zat’ko, Michael Solar, Vladimír Nečas
Publikováno v: International Journal of Modern Physics: Conference Series. 44:1660235
The particle detector based on a high purity epitaxial layer of 4H–SiC exhibits promising properties in detection of various types of ionizing radiation. Due to the wide band gap of 4H–SiC semiconductor material, the detector can reliably operate
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9cf398fe13268985dc5d0743f2f53940
https://doi.org/10.1142/s2010194516602350
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10
Influence of active volume on detection efficiency of GaAs neutron detectors
Autor: Pavol Boháček, F. Dubecky, Vladimír Nečas, K. Sedlackova, B. Zafko, A. Sagatova
Publikováno v: The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.
The semi-insulating (SI) GaAs detectors prepared from bulk LEC (Liquid Encapsulated Czochralski) substrate polished down from both sides to 270 µm were tested as detectors of fast neutrons. The HDPE (High Density PolyEthylene) neutron converter laye
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce26e5704b86ae88ea44df28bc95f780
https://doi.org/10.1109/asdam.2012.6418581
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