Zobrazeno 1 - 10
of 14
pro vyhledávání: '"F. Driss Khodja"'
Autor:
O. Arbouche, Yarub Al-Douri, K. Amara, Mohammed Ameri, M. Adjdir, N. Chami, S. Chibani, F. Driss Khodja
Publikováno v:
Journal of Electronic Materials. 49:4916-4922
Structural, electronic, elastic, and transport properties of FeVX (X = As, P) half-Heusler (HH) compounds have been calculated using density functional theory (DFT). The generalized gradient approximation developed by Perdew–Burke–Ernzerhof (GGA-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::499ae7877facb32b9bd5dc6e0bc36ad7
https://doi.org/10.1007/s11664-020-08225-4
https://doi.org/10.1007/s11664-020-08225-4
Publikováno v:
Journal of Computational Electronics. 19:26-37
The structural and optoelectronic properties of AlxGa1−xN (x = 0, 0.125, 0.375, 0.625, 0.875, and 1) semiconductors are studied in detail by applying the full-potential linearized augmented plane-wave method in density functional theory in WIEN2k s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da137ee9178f07f5172b1b416bc8f6ba
https://doi.org/10.1007/s10825-019-01423-2
https://doi.org/10.1007/s10825-019-01423-2
Autor:
F. Driss Khodja, B. Khalfallah, S. Chibani, A. Bentayeb, Belmorsli Bekki, N. Marbouh, M. Elkeurti
Publikováno v:
Journal of Computational Electronics. 18:791-801
The objective of this paper is the examination of structural, electronic, and optical properties of binary AlSb, AlN, and their novel ternary AlNxSb1−x alloys (x = 0.25, 0.5, and 0.75), within the full-potential linearized augmented plane wave meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52fc864acfea3006cb664ebd53fc5795
https://doi.org/10.1007/s10825-019-01338-y
https://doi.org/10.1007/s10825-019-01338-y
Publikováno v:
Journal of Computational Electronics. 17:899-908
We report on the investigation of the structural, electronic, and optical properties of binary compounds (MgO and MgSe) and their ternary $$\hbox {MgO}_{1-{x}}\hbox {Se}_{{x}}$$ ( $$x=0.25, 0.5, 0.75$$ ) alloys within the density functional theory ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::570086b015dfd04a320ccb39a612b987
https://doi.org/10.1007/s10825-018-1188-7
https://doi.org/10.1007/s10825-018-1188-7
Publikováno v:
Materials Science in Semiconductor Processing. 113:105049
A detailed study of the structural, electronic, elastic and thermoelectric properties of AlxGa1-xN (x = 0, 0.125, 0.375, 0.625, 0.875 and 1) semiconductors, was performed by applying the density functional theory within the full-potential linearized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a00598960f24475240e23e4c1cb23a0
https://doi.org/10.1016/j.mssp.2020.105049
https://doi.org/10.1016/j.mssp.2020.105049
Autor:
A. Boudali, F. Driss Khodja, K. Amara, M. Driss Khodja, A. Elias, Bouhalouane Amrani, A. Abada
Publikováno v:
Physica B: Condensed Matter. 405:3879-3884
Structural, elastic, and electronic properties of orthorhombic Pbnm CaTiO 3 are studied using both full potential linearized augmented plane wave (FP-LAPW) and plane-wave pseudopotential (PW-PP) methods. Exchange–correlation effects are treated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea41984fa24f9cd3b784db6533e6d4ed
https://doi.org/10.1016/j.physb.2010.06.020
https://doi.org/10.1016/j.physb.2010.06.020
Publikováno v:
Physica B: Condensed Matter. 403:4305-4308
By employing the first-principles method of the full potential linear augmented plane waves (FPLAPW), the structural, elastic and the electronic properties of LaBi are investigated. It is found that this compound has a semiconducting small and indire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca6484f76635ce364c84f5962b15ef8
https://doi.org/10.1016/j.physb.2008.09.030
https://doi.org/10.1016/j.physb.2008.09.030
Autor:
F. Driss-Khodja, B. Khelifa, B. Soudini, H. Aourag, N. Amrane, Nacer Badi, M. Driz, Hamza Abid
Publikováno v:
Materials Science and Engineering: B. 27:93-97
A method for calculating the detailed electronic properties of the pseudobinary semiconductor alloy Ga x Al 1− x Sb os presented. The technique begins with realistic band structures obtained for the constituent compounds by fitting the band gap sym
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::561cd09c61546f0a4e656893e65ccafa
https://doi.org/10.1016/0921-5107(94)90128-7
https://doi.org/10.1016/0921-5107(94)90128-7
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Akademický článek
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