Výsledky vyhledávání

SixGe1−x films and heterojunctions produced by epitaxial crystallization of a-SixGe1−x alloys on GaAs

Autor: F. Dondeo, H. Kostial, P. Krispin, M. A. A. Pudenzi, I. Chambouleyron, Paulo V. Santos

Publikováno v: Journal of Non-Crystalline Solids. :197-200

We studied the structural and electrical properties of crystallized a-Si x Ge 1− x alloys with 0⩽ x ⩽1 on (1 0 0) GaAs substrates. Raman spectroscopy on laser crystallized films shows the Si–Si, Ge–Ge, and Si–Ge vibrations characteristic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9d6a00f9c2adef8e7e5925a207ed3f9
https://doi.org/10.1016/j.jnoncrysol.2004.02.052

Zobrazit plný text záznamu

Pulsed laser crystallization and structuring of a-Ge on GaAs

Autor: Antonio Ricardo Zanatta, Uwe Jahn, Paulo V. Santos, F. Dondeo, A. Trampert, David Comedi, M. A. A. Pudenzi, I. Chambouleyron

Publikováno v: Journal of Non-Crystalline Solids. :137-142

We have investigated the crystallization and structuring of amorphous Ge (a-Ge) films deposited on crystalline GaAs (1 0 0) substrates by nanosecond laser pulses. Epitaxial Ge films on GaAs are obtained for laser fluencies that completely melt the Ge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::69f88105798ec790471dbbec72c6f9cc
https://doi.org/10.1016/s0022-3093(01)00998-x

Zobrazit plný text záznamu

Laser interference structuring of a-Ge films on GaAs

Autor: F. Dondeo, I. Chambouleyron, Paulo V. Santos, Uwe Jahn, Antonio Ricardo Zanatta, A. Trampert

Publikováno v: Journal of Applied Physics. 91:2916-2920

We have investigated the laser interference crystallization (LIC) of amorphous germanium films on (100)-oriented GaAs substrates using nanosecond laser pulses. We demonstrate that LIC can produce periodic arrays of epitaxially crystallized Ge lines o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8121070f1a4f6113e423a4350e6087fb
https://doi.org/10.1063/1.1448674

Zobrazit plný text záznamu

Epitaxial pulsed laser crystallization of amorphous germanium on GaAs

Autor: F. Dondeo, I. Chambouleyron, K. H. Ploog, Paulo V. Santos, H. J. Zhu, David Comedi, A. Trampert, Antonio Ricardo Zanatta

Publikováno v: Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP

We have investigated the crystallization of amorphous germanium films on GaAs crystals using nanosecond laser pulses. The structure and composition of the crystallized layers is dominated by nonequilibrium effects induced by the fast cooling process

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06747163840419850d48db4f671172f0
https://doi.org/10.1063/1.1390312

Zobrazit plný text záznamu

Investigation of ion-bombardment effects on the formation of voids during deposition of a-Ge:H

Autor: Z. L. Peng, Peter J. Simpson, David Comedi, F. Dondeo, Peter Mascher, I. Chambouleyron

Publikováno v: Physica B: Condensed Matter. :579-583

In this work, positron annihilation (PA) and infra-red (IR) spectroscopies are combined to obtain information on the H bonding and the void size distribution as a function of deposition parameters (substrate temperature and ion-bombardment) during re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f0b526838bd19ca820fcc1c93607e84
https://doi.org/10.1016/s0921-4526(99)00578-5

Zobrazit plný text záznamu

Surface Study of Vitreous Carbon Obtained from Glassy Carbon Powder

Autor: Walter Miyakawa, Lisete Fernandes, Silvia Sizuka Oishi, F. Dondeo, Álvaro José Damião, F. Nascimento, Edson Cocchieri Botelho

Publikováno v: MRS Proceedings. 1373

This work presents a surface study of monolithic vitreous (or glassy) carbon - MVC - obtained from vitreous carbon powder. Defective MVC pieces are crushed in a ball mill and size classified by sifting. The MVC powder is mixed with furfuryl-alcohol r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cbe6f13e80dc876b62a0719de05d38e2
https://doi.org/10.1557/opl.2012.291

Zobrazit plný text záznamu

Pulsed laser crystallization of SiGe alloys on GaAs

Autor: M. Ramsteiner, F. Dondeo, M. A. A. Pudenzi, I. Chambouleyron, Paulo V. Santos, David Comedi

Publikováno v: Brazilian Journal of Physics, Volume: 32, Issue: 2a, Pages: 376-378, Published: JUN 2002
Brazilian Journal of Physics v.32 n.2a 2002
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF

We have investigated the crystallization of amorphous SiGe films deposited on crystalline GaAs (001) substrates using ns laser pulses. Analysis of the film structure using Raman spectroscopy indicates the formation of heteroepitaxial Si xGe1/GaAs str

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d8fbb8920dcbcce4e3c5c43f06904db
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200036&lng=en&tlng=en

Zobrazit plný text záznamu

Compact hydrogenated amorphous germanium films by ion-beam sputtering deposition

Autor: Z. L. Peng, I. Chambouleyron, David Comedi, F. Dondeo, Peter Mascher

Publikováno v: Scopus-Elsevier

We explore reactive ion-beam sputtering deposition (IBSD) for the growth of a-Ge:H films. It is shown that compact a-Ge:H films can be obtained by IBSD at substrate temperatures between 180°C and 220°C by minimizing the ion bombardment of the growt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8948aa8c87abd65a478b5cd9db95749
http://www.scopus.com/inward/record.url?eid=2-s2.0-0009010499&partnerID=MN8TOARS

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání