Zobrazeno 1 - 10
of 75
pro vyhledávání: '"F. Delachat"'
Autor:
F. Delachat, Christopher Liman, Raluca Tiron, Ahmed Gharbi, Daniel F. Sunday, Guillaume Freychet, R. Joseph Kline
Publikováno v:
Journal of Applied Crystallography. 52:106-114
The directed self-assembly (DSA) of block copolymers (BCPs) is a promising low-cost approach to patterning structures with critical dimensions (CDs) which are smaller than can be achieved by traditional photolithography. The CD of contact holes can b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a524a09000bf84a07061119f575235af
https://doi.org/10.1107/s1600576718017272
https://doi.org/10.1107/s1600576718017272
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::978c93d00e749227cf662ca0177d264d
https://doi.org/10.1109/asmc49169.2020.9185377
https://doi.org/10.1109/asmc49169.2020.9185377
Autor:
Christophe Navarro, F. Delachat, Laurent Pain, Xavier Chevalier, Celia Nicolet, Hubert Teyssedre
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
In this work, an evaluation of various adhesion promoters (or primers) for soft ultra-violet (UV) nanoimprint lithography (NIL) is reported. The evaluation is performed using 200 mm wafer scale in the HERCULES® NIL equipment platform available at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::044c31f229f98a7f2bc7fe50d160e4bf
https://doi.org/10.1117/12.2515607
https://doi.org/10.1117/12.2515607
Publikováno v:
34th European Mask and Lithography Conference.
In this paper the bias table models for the wafer scale SmartNIL™ technology are addressed and validated using complete Scanning Electron Microscopy (SEM) characterizations and polynomial interpolation functions. Like the other nanoimprint lithogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280a1aad6b73f6d9ac09ac4a66401a4f
https://doi.org/10.1117/12.2326106
https://doi.org/10.1117/12.2326106
Autor:
Nicolas Posseme, Christophe Navarro, Laurent Pain, Guillaume Claveau, F. Delachat, Ahmed Gharbi, Antoine Fouquet, Patricia Pimenta-Barros, Ian Cayrefourcq, Raluca Tiron, Celia Nicolet
Publikováno v:
Nanoscale
Advanced surface affinity control for grapho-epitaxy directed self-assembly (DSA) patterning is essential for providing reliable DSA-based solutions for the development of semiconductor patterning. Independent control of surface affinity between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7650249d1f983a82944c37d9e0d33d7f
https://pubmed.ncbi.nlm.nih.gov/29850715
https://pubmed.ncbi.nlm.nih.gov/29850715
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XII.
In this paper the bias table models and rules-based correction strategies for the wafer scale nanoimprint lithography (NIL) technology are addressed using complete Scanning Electron Microscopy (SEM) characterizations. This replication technology is k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c28f65e4db5513de849f9428877715
https://doi.org/10.1117/12.2299326
https://doi.org/10.1117/12.2299326
Autor:
F. Delachat, Guillaume Freychet, Raluca Tiron, R. Joseph Kline, Ahmed Gharbi, Daniel F. Sunday
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Densely patterned contact holes form a key component of integrated circuits, but there are significant challenges to patterning holes with a sub 10-nm radius. The directed self-assembly (DSA) of block copolymers offers a potential solution, where a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67a98dee3546b1ab1264030e885b186e
https://doi.org/10.1117/12.2297480
https://doi.org/10.1117/12.2297480
Autor:
Ahmed Gharbi, Christophe Navarro, Celia Nicolet, Patricia Pimenta-Barros, Raluca Tiron, Ian Cayrefourcq, F. Delachat, Laurent Pain, Céline Lapeyre, Maxime Argoud, G. Chamiot-Maitral
Publikováno v:
Novel Patterning Technologies 2018.
CH (Contact hole) patterning by DSA (Directed Self-Assembly) of BCP (Block Copolymer) is still attracting interest from the semiconductor industry for its CH repair and pitch multiplication advantages in sub-7nm nodes. For several years, extensive st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee2ef9d2bf8eb8a0b035e41e700f0c4d
https://doi.org/10.1117/12.2297422
https://doi.org/10.1117/12.2297422
Autor:
Celia Nicolet, Christophe Navarro, Xavier Chevalier, Frank Fournel, Jean-Côme Phillipe, F. Delachat, Ian Cayrefourcq, Sandra Bos, Hubert Teyssedre, Vincent Larrey
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
In this work, an evaluation of various ASL processes for 200 mm wafer scale in the HERCULES® NIL equipment platform available at the CEA-Leti through the INSPIRE program is reported. The surface and adherence energies were correlated to the AFM and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::078a8422454c0cc372f6b0bbd00db926
https://doi.org/10.1117/12.2298407
https://doi.org/10.1117/12.2298407
Autor:
Larysa Khomenkova, J.L. Casas Espinola, Abdelilah Slaoui, F. Delachat, Tetyana Torchynska, E. Vergara Hernandez
Publikováno v:
Thin Solid Films. 581:65-69
Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH 3 /SiH 4 ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f5a2adef8dab6c874058b06cce39b14
https://doi.org/10.1016/j.tsf.2014.11.070
https://doi.org/10.1016/j.tsf.2014.11.070