Výsledky vyhledávání

A 4 bit full Nyquist 1 Gsample/s monolithic GaAs ADC with on-chip S/H and error correction

Autor: M. Gloanec, M. Le Paih, T. Nguyen, F. Debrie, J.M. Uro, T. Dean, F. Thomas, Stephane Ruggeri

Publikováno v: 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

A 4-bit D-MESFET GaAs ADC (analog/digital converter) has been designed, processed, and tested. The circuit has a flash structure and includes an original false-state-corrector circuit. A sample and hold has been placed at the quantizer input to impro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd1fec9eb0c1cb8477b60cb48ae44b78
https://doi.org/10.1109/gaas.1988.11056

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1 GHz GaAs ADC building blocks

Autor: F. Thomas, F. Debrie, S. Ruggeri, P. Martin, M. Gloanec, J.M. Uro

Publikováno v: Proceedings of the IEEE 1988 Custom Integrated Circuits Conference.

Commercial GaAs ICs for high-speed (6-bit, 1G-sample/s) data acquisition are under development, using a low-cost conventional D-MESFET technology. First-generation sample-and-holds (S/Hs) and comparators are currently available as samples. Diode brid

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cf30342ae0577e15f9505f015085b6a
https://doi.org/10.1109/cicc.1988.20829

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0.8 μm HSOI4CB rad-tolerant technology for space applications: a solution to harden existing components with minimum design risk

Autor: G. Josse, G. Borel, F. Debrie, D. Dautriche, P. Lestrat, E. Thouret

Publikováno v: Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems.

For several years, TCS has been involved in the transfer of epitaxial CMOS technology of microprocessors such as 68020 from Motorola and in the development of hardened Standard or ASIC products. The know-how which has bean acquired during these opera

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9aaa4dc415c5495853f7400d449f583
https://doi.org/10.1109/radecs.1995.509769

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1-GHz GaAs ADC building blocks

Autor: F. Thomas, P. Martin, F. Debrie, J.M. Uro, M. Gloanec, T. Nguyen, Sa. Ruggeri, M. Le Paih

Publikováno v: IEEE Journal of Solid-State Circuits. 24:223-228

GaAs ICs for high-speed, 6-b, 1G-sample/s (Gs/s) data acquisition are under development, using a low-cost conventional D-MESFET technology. First-generation sample-and-holds (S/Hs) and comparators are currently being sampled to customers. Diode-bridg

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b611815051a184642411041d842f92c
https://doi.org/10.1109/4.18580

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Self‐aligned ohmic contacts technology using Ti plasma etching for GaAs metal Schottky field‐effect transistors

Autor: J. Chevrier, J. Chaplart, F. Debrie

Publikováno v: Journal of Applied Physics. 59:210-212

Bimetal ‘‘T‐gate’’ structures have been obtained by selective Ti‐Al plasma etching. These structures have been used as self‐aligned masks for ohmic contact metallizations. Titanium Schottky diodes exhibit a barrier height of 720 mV with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::58a30f6f17611f0cf528d3c9b02c65e8
https://doi.org/10.1063/1.336865

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