Zobrazeno 1 - 7
of 7
pro vyhledávání: '"F. Christopher Rong"'
Autor:
F. Christopher Rong, Håkan Pettersson, Noble M. Johnson, Edward H. Poindexter, Hermann G. Grimmeiss, Walter R. Buchwald
Publikováno v:
Materials Science Forum. :1153-1158
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19caa10d8c6b0c361533066f5e95d8e1
https://doi.org/10.4028/www.scientific.net/msf.83-87.1153
https://doi.org/10.4028/www.scientific.net/msf.83-87.1153
Publikováno v:
Materials Science Forum. :935-940
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b97c2c070d4bb6de90fc735b8c80940
https://doi.org/10.4028/www.scientific.net/msf.83-87.935
https://doi.org/10.4028/www.scientific.net/msf.83-87.935
Publikováno v:
Journal of Applied Physics. 70:346-354
We report the observation of both silicon and nitrogen paramagnetic defect centers using X‐band and Q‐band electron spin resonance microwave excitation frequencies. By using two different microwave frequencies along with a computer analysis of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dad56d57e851427fa48efa5ef2cd1c9
https://doi.org/10.1063/1.350280
https://doi.org/10.1063/1.350280
Autor:
G.D. Watkins, F. Christopher Rong
Publikováno v:
Materials Science Forum. :827-832
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46e6a127741728be389e76f645d21454
https://doi.org/10.4028/www.scientific.net/msf.10-12.827
https://doi.org/10.4028/www.scientific.net/msf.10-12.827
Autor:
Warren, William L., Rong, F. Christopher, Poindexter, Edward H., Gerardi, Gary J., Kanicki, Jerzy
Publikováno v:
Journal of Applied Physics; 7/1/1991, Vol. 70 Issue 1, p346, 9p, 6 Diagrams, 1 Graph
Publikováno v:
Journal of Materials Science: Materials in Electronics; Nov2010, Vol. 21 Issue 11, p1149-1153, 5p
Proceedings of the 16th International Conference Defects in Semiconductors (ICDS-16), Lehigh University, USA, July 1991
