Zobrazeno 1 - 10
of 29
pro vyhledávání: '"F. Borjans"'
Publikováno v:
PRX Quantum, Vol 2, Iss 2, p 020309 (2021)
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk band structure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted
Externí odkaz:
https://doaj.org/article/494b2d50ca964a338645975aac25c512
Publikováno v:
Physical Review Research, Vol 2, Iss 1, p 012006 (2020)
Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate “flopping-mode” electric dipole spin resonanc
Externí odkaz:
https://doaj.org/article/d8d452768ac34cdabb36e68c37566d15
Autor:
R. Kotlyar, S. Premaratne, G. Zheng, J. Corrigan, R. Pillarisetty, S. Neyens, O. Zietz, T. Watson, F. Luthi, F. Borjans, L. Lampert, E. Henry, H. George, S. Bojarski, J. Roberts, A. Y. Matsuura, J. S. Clarke
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Publikováno v:
Nature. 577:195-198
Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance inte
Autor:
R. Pillarisetty, T.F. Watson, B. Mueller, E. Henry, H.C. George, S. Bojarski, L. Lampert, F. Luthi, R. Kotlyar, O. Zietz, S. Neyens, F. Borjans, R. Caudillo, D. Michalak, R. Nahm, J. Park, M. Ramsey, J. Roberts, S. Schaal, G. Zheng, T. Krahenmann, M. Lodari, A.M.J. Zwerver, M. Veldhorst, G. Scappucci, L.M.K. Vandersvpen, J.S. Clarke
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Akademický článek
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Autor:
X. Zhang, Xiao Mi, Guangming Cheng, F. Borjans, Jason R. Petta, Clayton A. Jackson, Norman Y. Yao, Lisa F. Edge
Publikováno v:
PRX Quantum. 2
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted
An important requirement for spin-based quantum information processing is reliable and fast readout of electron spin states, allowing for feedback and error correction. However, common readout techniques often require additional gate structures hinde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcf33b1f713f8b96d677901a56d64411
http://arxiv.org/abs/2104.03862
http://arxiv.org/abs/2104.03862
Autor:
A. J. Sigillito, F. Borjans, Jacob M. Taylor, Guido Burkard, Maximilian Russ, D. M. Zajac, Jason R. Petta
Publikováno v:
Science. 359:439-442
Building an essential quantum component To build a universal quantum computer—the kind that can handle any computational task you throw at it—an essential early step is to demonstrate the so-called CNOT gate, which acts on two qubits. Zajac et al
Publikováno v:
Physical Review Applied. 11
Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T_1 by measuring T_1 as a f