Zobrazeno 1 - 10
of 12
pro vyhledávání: '"F. Bittersberger"'
Autor:
F. Bittersberger, H. Ch. Alt, Andreas Dr. Dipl.-Phys. Huber, H. E. Wagner, W.v. Ammon, L. Koester
Publikováno v:
Physica B: Condensed Matter. :130-133
FTIR absorption measurements have been carried out on shallow donor transitions in silicon related to (N, O)-complexes. Growth of a nitrogen-doped float-zone ingot with an axial variation of the interstitial oxygen concentration from 16 up to 6×10 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::793e2d587147f94f57c0789733a57051
https://doi.org/10.1016/j.physb.2007.08.129
https://doi.org/10.1016/j.physb.2007.08.129
Autor:
G. Kissinger, Hans Richter, W. von Ammon, Martin Dr. Phys. Weber, T. Müller, F. Bittersberger, U. Lambert
Publikováno v:
physica status solidi (a). 203:677-684
Based on Fourier transform infrared (FTIR) spectroscopy and bulk micro-defect investigations, in relation to earlier results of other groups, we suggest the following model for oxide precipitate nucleation in N-doped silicon. Around 600 °C a nucleat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c675ee4a2ef39cfbf21f00919f0a894d
https://doi.org/10.1002/pssa.200564513
https://doi.org/10.1002/pssa.200564513
Publikováno v:
Materials Science in Semiconductor Processing. 9:114-116
Nitrogen-doped CZ silicon crystals with different oxygen contents were studied by quantitative FTIR spectroscopy. Thermal-equilibrium annealing at 600 °C is suitable to obtain information on the chemical composition of N–O related shallow donors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb698b293910ef5d8cc6b5e841f940ed
https://doi.org/10.1016/j.mssp.2006.01.035
https://doi.org/10.1016/j.mssp.2006.01.035
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
The shallow dopants B, P, Al, As, and Sb in Si have been investigated by low-temperature Fourier-transform infrared absorption measurements. Experimental procedures are described to obtain quantitative results for the B and P concentration with impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52c23adde54296726e4dc9a330e8194
https://doi.org/10.1063/1.56896
https://doi.org/10.1063/1.56896
Autor:
F. Bittersberger, L. Koster
Publikováno v:
MRS Proceedings. 262
Using FTIR-spectroscopy for the determination of the oxygen content in CZ Si, an additional absorption of IR light occurs for doping densities above 1015/cm3, which is caused by the free carriers. It increases nearly linearly with the carrier density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14db408d3fed97400382f9b86d610973
https://doi.org/10.1557/proc-262-271
https://doi.org/10.1557/proc-262-271
Autor:
L. Koester, F. Bittersberger, Andreas Dr. Dipl.-Phys. Huber, W. von Ammon, H. E. Wagner, H. Ch. Alt
Publikováno v:
Applied Physics Letters. 91:152102
For clarification of the unknown chemical composition of the electrically active N–O defects in silicon, an ingot with variable oxygen content and fixed nitrogen concentration was investigated by infrared spectroscopy. Shallow donor spectra taken a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b417519efd08cf009e633f673e9833d7
https://doi.org/10.1063/1.2795801
https://doi.org/10.1063/1.2795801
Publikováno v:
Applied Physics Letters. 87:151909
Fourier-transform infrared absorption measurements have been carried out on nitrogen-doped Czochralski-grown silicon crystals after thermal annealing at 600°C. The strength of the electronic transitions due to N–O related shallow donors shows a sq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1055a6d14f0e7ce077c0dae124efa9ed
https://doi.org/10.1063/1.2099517
https://doi.org/10.1063/1.2099517
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