Zobrazeno 1 - 10
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pro vyhledávání: '"F. Besahraoui"'
Akademický článek
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Autor:
M’hamed Gazzoul, Abdelhak Baizid, Djamel Ghaffor, M’hamed Bouslama, F. Besahraoui, Zakia Lounis, Bachir Kharroubi, Abdallah Ouerdane, M. Salah Halati, Choucki Zegadi
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 226:9-16
SnO2 thin films are materials with surfaces sensitive to the processes of elaboration, synthesis and post-synthesis treatments for different technology applications. The main objective of the present work is to investigate three samples issued from s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85139eb1175d7d08dc4d0ec3faaeb5e4
https://doi.org/10.1016/j.elspec.2018.04.006
https://doi.org/10.1016/j.elspec.2018.04.006
Akademický článek
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Autor:
M. Bouslama, Hassen Maaref, M.H. Hadj Alouane, Nicolas Chauvin, F. Besahraoui, Z. Lounis, Faouzi Saidi, Michel Gendry, M. Ghaffour, L. Bouzaiene
Publikováno v:
Superlattices and Microstructures
Superlattices and Microstructures, Elsevier, 2014, 65, pp.264-270
Superlattices and Microstructures, Elsevier, 2014, 65, pp.264-270
We investigate with photoluminescence (PL) measurements the optoelectronic properties of self-organized InAs quantum dots (QDs) grown on nominal InP(0 0 1) substrate. InAs/InP(0 0 1) QDs are grown by Molecular Beam Epitaxy (MBE) method with optimized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c77b657cff7bcba8428dbe3d8e71eb4f
https://doi.org/10.1016/j.spmi.2013.10.014
https://doi.org/10.1016/j.spmi.2013.10.014
Publikováno v:
World Journal of Nano Science and Engineering. :1-5
The enhanced optical absorption measured by Constant Photocurrent Method (CPM) of hydrogenated nanocrystalline silicon thin films is due mainly to bulk and/or surface light scattering effects. A new numerical method is presented to calculate both tru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54f53c0121ca001df89fce64524dfb8b
https://doi.org/10.4236/wjnse.2012.21001
https://doi.org/10.4236/wjnse.2012.21001
Publikováno v:
2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9afd76b3ae69ba55f1643525c409374
https://doi.org/10.1109/nawdmpv.2014.6997602
https://doi.org/10.1109/nawdmpv.2014.6997602
Autor:
M. Bouslama, K. Boulenouar, Z. Chelahi Chikr, Nicolas Chauvin, M. Ghaffour, A. Ouerdane, B. Benrabah, A. Mokadem, F. Besahraoui
Publikováno v:
Surface Review and Letters
Surface Review and Letters, World Scientific Publishing, 2013, 20 (05), ⟨10.1142/S0218625X13500509⟩
Surface Review and Letters, World Scientific Publishing, 2013, 20 (05), ⟨10.1142/S0218625X13500509⟩
The semiconductor SnO 2 is an important material to be used in different fields as the monitoring of air pollution, toxic gas and other applications as solar cells, optoelectronic devices, etc. The simulation method such as the generalized gradient a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d98edff88a00032097712e786dc2a5d5
https://hal.archives-ouvertes.fr/hal-01735310
https://hal.archives-ouvertes.fr/hal-01735310
Publikováno v:
International Journal of Modern Physics B
International Journal of Modern Physics B, World Scientific Publishing, 2016, 21, pp.1650145
International Journal of Modern Physics B, World Scientific Publishing, 2016, 21, pp.1650145
With the help of photoluminescence Spectroscopy (PLS), we have investigated the optoelectronic properties of two different families of InAs quantum dashes (QDashes) grown on misoriented InP(001) substrate with 2[Formula: see text]off miscut angle tow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ada3f441c631ad21c2581d7116c8b9a
https://doi.org/10.1142/s0217979216501459
https://doi.org/10.1142/s0217979216501459
Autor:
Z. CHELAHI CHIKR, A. MOKADEM, M. BOUSLAMA, F. BESAHRAOUI, M. GHAFFOUR, A. OUERDANE, K. BOULENOUAR, N. CHAUVIN, B. BENRABAH
Publikováno v:
Surface Review and Letters. 20(05):1350050-1
The semiconductor SnO2 is an important material to be used in different fields as the monitoring of air pollution, toxic gas and other applications as solar cells, optoelectronic devices, etc. The simulation method such as the generalized gradient ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______645::686af12cd7bf2d80d2fc63ac974d086a
http://www.worldscinet.com/cgi-bin/details.cgi?type=html&id=pii:S0218625X13500509
http://www.worldscinet.com/cgi-bin/details.cgi?type=html&id=pii:S0218625X13500509
Autor:
K. Hamaida, A. Ouerdane, A. Abdellaoui, M. Ghaffour, Michel Gendry, F. Besahraoui, Z. Chelahi-Chikr, M. Bouslama
Publikováno v:
Surface Review and Letters
Surface Review and Letters, World Scientific Publishing, 2012, 19 (06), pp.1250066. ⟨10.1142/S0218625X12500667⟩
Surface Review and Letters, World Scientific Publishing, 2012, 19 (06), pp.1250066. ⟨10.1142/S0218625X12500667⟩
Recently, the development of indium oxide such as In2O3 on the III–V semiconductors shows successful technological applications as in the gas sensor field, the emission devices, the biotechnology, etc. The indium oxide In2O3 attracted considerable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::074efa198a6a212f2057ed27eeaab23d
https://doi.org/10.1142/s0218625x12500667
https://doi.org/10.1142/s0218625x12500667