Zobrazeno 1 - 10
of 29
pro vyhledávání: '"F. Berg-Rasmussen"'
Autor:
Mourits Nielsen, L. Lottermoser, Robert Feidenhans'l, Gerald Falkenberg, Jeff Baker, J. H. Zeysing, Robert L. Johnson, F. Berg-Rasmussen, Oliver Bunk
Publikováno v:
Physical Review B. 59:12228-12231
A detailed structural model for the indium-induced $\mathrm{Si}(111)\ensuremath{-}(4\ifmmode\times\else\texttimes\fi{}1)$ surface reconstruction has been determined by analyzing an extensive set of x-ray-diffraction data recorded with monochromatic $
Autor:
R. Feidenhans'l, Gerald Falkenberg, L. Lottermoser, Oliver Bunk, Robert L. Johnson, F. Berg-Rasmussen, M. Nielsen, J. H. Zeysing
Publikováno v:
Applied Surface Science. 142:88-93
A detailed structural model of the indium-induced Ge(103)-(1×1) surface reconstruction has been established by analyzing an extensive set of X-ray data recorded with synchrotron radiation. Our results show that models with one indium and one germani
Autor:
Gerald Falkenberg, A.J. Steinfort, Jennifer L. Baker, F. Berg Rasmussen, Mourits Nielsen, Robert Feidenhans'l, L. Lottermoser, P.M.L.O. Scholte, Robert L. Johnson
Publikováno v:
Physica B: Condensed Matter. 248:1-8
Nanoscale clusters are often formed during heteroepitaxial crystal growth. Misfit between the lattice parameter of the substrate and the adsorbate stimulates the formation of regular clusters with a characteristic size. The well-known “hut-clusters
Publikováno v:
Materials Science Forum. :373-378
Autor:
B. Bech Nielsen, F. Berg Rasmussen
Publikováno v:
Materials Science and Engineering: B. 36:241-245
The microstructure of the dominant nitrogen pair defect in silicon and germanium has been studied by uniaxial stress measurements on local vibrational modes ascribed to the pair. It is shown directly that the pair in germanium has a different structu
Autor:
J. Miró, Sven Öberg, R. Jones, Jonathan P. Goss, F. Berg Rasmussen, Peter Deák, Christopher P. Ewels
Publikováno v:
Materials Science Forum. :791-796
Publikováno v:
Physical Review B. 50:4378-4384
Several nitrogen-related centers have been introduced by ion implantation of nitrogen into germanium and studied by infrared-absorption spectroscopy. Two local vibrational modes at 825.3 and 658.6 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ were espec
Autor:
F. Berg Rasmussen, B. Bech Nielsen
Publikováno v:
Physical Review B. 49:16353-16360
The structure of the nitrogen pair in crystalline silicon has been studied by the channeling technique and by infrared absorption spectroscopy. Silicon crystals have been implanted with $^{15}\mathrm{N}$ at room temperature and have subsequently been
Publikováno v:
Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::338031f834d6e790efe36e789b5fa7d0
https://doi.org/10.1016/b978-0-444-82413-4.50025-1
https://doi.org/10.1016/b978-0-444-82413-4.50025-1