Zobrazeno 1 - 10
of 93
pro vyhledávání: '"F. Beisswanger"'
Autor:
J. Albers, A. Schuppen, R. Gotzfried, H. Dietrich, K.-H. Bach, U. Seiler, F. Beisswanger, S. Gerlach
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:661-668
We report on design aspects and the implementation of RF integrated circuits (RFIC's) using TEMIC's SiGe heterojunction bipolar transistor (HBT) technology. SiGe HBT's with 50-GHz f/sub T/ and f/sub max/ were obtained by a production process includin
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1417-1422
We report on design aspects and the implementation of radio-frequency integrated circuits using TEMIC's SiGe technology. The differences between the device parameters of silicon bipolar junction transistor and silicon germanium heterojunction bipolar
Publikováno v:
Journal of Crystal Growth. 157:222-226
The conduction band edge of silicon consists of six minima located in k-space along 〈100〉 directions. Transitions of electrons between perpendicular valleys are induced by so-called f-type intervalley scattering processes. In this work we have st
Autor:
J. Gerdes, K.M. Strohm, C.N. Rheinfelder, J.F. Luy, F. Beisswanger, W. Heinrich, F.J. Schmuckle
Publikováno v:
IEEE Microwave and Guided Wave Letters. 6:398-400
Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a conversion (dc to rf) efficiency of 6% is measured.
Autor:
W. Heinrich, F. Beisswanger, C.N. Rheinfelder, J. Gerdes, F.J. Schmuckle, J.-F. Luy, Karl Strohm
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
First results on coplanar MMICs with SiGe HBTs are presented. The circuits are fabricated on high-resistivity Si substrates using a double-mesa HBT process. In the Ka-band, an oscillator output power of 1 dBm and 4.4 dB gain for a one-stage amplifier
Publikováno v:
1997 IEEE MTT-S International Microwave Symposium Digest.
A new large-signal model for SiGe HBTs is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from measurements using a special procedure. The model yields excellent accuracy for DC and S
Publikováno v:
26th European Microwave Conference, 1996.
We report on design, technology, and experimental results of microstrip and coplanar Si-SiGe HBT Ks-band oscillators integrated monolithically on high resistivity silicon. The tuning range of the microstrip VCO was 100 MHz around 22.8 GHz and the out
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.