Zobrazeno 1 - 10
of 178
pro vyhledávání: '"F. Bauwens"'
Autor:
Arthur W. Lichtenberger, Linli Xie, Souheil Nadri, Matthew F. Bauwens, Nicholas Scott Barker, Michael E. Cyberey, Robert M. Weikle, Alexander Arsenovic
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 10:583-592
A proof-of-concept demonstration of on-wafer electronic calibration in the submillimeter-wave band (325–500 GHz) is presented. A GaAs Schottky diode shunting a coplanar transmission line is employed as an electronic standard that is tuned by bias a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb30bb567f65de49576a4846dbe6f400
https://doi.org/10.1109/tthz.2020.3006744
https://doi.org/10.1109/tthz.2020.3006744
Autor:
Alexander Arsenovic, Souheil Nadri, Linli Xie, Masoud Jafari, Matthew F. Bauwens, Robert M. Weikle
Publikováno v:
IEEE Microwave and Wireless Components Letters. 29:474-476
This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are quasi-vertical gallium arsenide Schottky diodes integrated on silicon. The technique utilizes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f701e985871faa089214511ec28eeec8
https://doi.org/10.1109/lmwc.2019.2918295
https://doi.org/10.1109/lmwc.2019.2918295
Autor:
Matthew F. Bauwens, Naser Alijabbari, Robert M. Weikle, N. Scott Barker, Michael E. Cyberey, Linli Xie, Arthur W. Lichtenberger, Souheil Nadri
Publikováno v:
IEEE Electron Device Letters. 38:1516-1519
This letter describes a new approach for fabricating quasi-vertical submillimeter-wave GaAs Schottky diodes heterogeneously integrated to high-resistivity silicon substrates. The new method is robust and eliminates previous processing steps that were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b5b8ae4465ba062944216918bf67bea
https://doi.org/10.1109/led.2017.2756920
https://doi.org/10.1109/led.2017.2756920
Publikováno v:
Proceedings of the IEEE. 105:1105-1120
This paper presents a comprehensive overview of the development and utilization of a micromachined silicon-on-insulator (SOI) fabrication process that has enabled the development of terahertz (THz) frequency superconducting-insulator-superconducting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d35c7b668c077af0a0eb269a90bd29
https://doi.org/10.1109/jproc.2016.2612191
https://doi.org/10.1109/jproc.2016.2612191
Autor:
Linli Xie, N. Scott Barker, Michael E. Cyberey, Robert M. Weikle, Souheil Nadri, Arthur W. Lichtenberger, Alexander Arsenovic, Matthew F. Bauwens
Publikováno v:
2019 93rd ARFTG Microwave Measurement Conference (ARFTG).
An approach for one port on-wafer electronic calibration at submillimeter wavelengths is described. Quasivertical GaAs Schottky diodes integrated onto silicon serve as the electronic calibration standard. The S-parameters of the diode standards are c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07bb65f263e094b76ca6dc044adbf744
https://doi.org/10.1109/arftg.2019.8739175
https://doi.org/10.1109/arftg.2019.8739175
Autor:
Matthew F. Bauwens, Linli Xie, Michael E. Cyberey, Chunhu Zhang, Arthur W. Lichtenberger, Robert M. Weikle, N. Scott Barker
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
This paper demonstrates the first differential on-wafer probe with integrated balun operating in the WR-3.4 (220 – 330 GHz) waveguide band. The probe employs integrated balun circuitry to convert the single-ended signal from the waveguide output of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b6beb34a2037534e13383d14eebb93
https://doi.org/10.1109/mwsym.2019.8701058
https://doi.org/10.1109/mwsym.2019.8701058
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:1585-1593
Differential circuits are commonly used for millimeter-wave monolithic integrated circuits such as amplifiers and voltage-controlled oscillators. The infrastructure for their characterization, however, remains limited at these frequencies. With the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6412ba0262bbed56b87a61a984e53387
https://doi.org/10.1109/tmtt.2016.2538760
https://doi.org/10.1109/tmtt.2016.2538760
Autor:
Bartlomiej Salski, P. Zagrajek, Matthew F. Bauwens, D. Obrebski, N. S. Barker, Pawel Kopyt, J. Marczewski
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector's effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::929d186bdd90cae403ee8db50fe9bc32
https://doi.org/10.1109/mwsym.2018.8439544
https://doi.org/10.1109/mwsym.2018.8439544
Autor:
Matthew F. Bauwens, Robert M. Weikle, Linli Xie, N. Scott Barker, Michael E. Cyberey, Christopher M. Moore, Noah Sauber, Arthur W. Lichtenberger, Souheil Nadri
Publikováno v:
I2MTC
The design and fabrication process for implementing a proof-of-concept on-wafer probe with integrated diode temperature sensor is reported. The sensor consists of a wafer probe fabricated from high-resistivity silicon using micromachining techniques.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ba4918bf37feca8ad4de58784df20c
https://doi.org/10.1109/i2mtc.2018.8409690
https://doi.org/10.1109/i2mtc.2018.8409690
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 5:73-80
This work reports on a new approach to realizing vertically oriented Schottky diodes, with ohmic contact formed directly below the anode, that can be readily integrated into planar millimeter and submillimeter-wave circuits. The diode structure is ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1077e1cb224f50bd8fc0987290f86bc2
https://doi.org/10.1109/tthz.2014.2361434
https://doi.org/10.1109/tthz.2014.2361434