Zobrazeno 1 - 7
of 7
pro vyhledávání: '"F. B. Naranjo"'
Autor:
S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco, D. Montero, L. Grenet, M. de la Mata, S. Fernández, L. Rodríguez-De Marcos, S. I. Molina, J. Olea, F. B. Naranjo
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115315-115315-7 (2018)
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm
Externí odkaz:
https://doaj.org/article/4ab9abdfaf944c4b820965cc8a734e34
Autor:
V. J. Gómez, J. Grandal, A. Núñez-Cascajero, F. B. Naranjo, M. Varela, M. A. Sánchez-García, E. Calleja
Publikováno v:
AIP Advances, Vol 8, Iss 10, Pp 105026-105026-11 (2018)
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-
Externí odkaz:
https://doaj.org/article/9a14f0a5cf3b444dbc0814b68850dd0e
Publikováno v:
physica status solidi c. 9:1065-1069
Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dc2e6b34a45df0a235130845f659afe
https://doi.org/10.1002/pssc.201100146
https://doi.org/10.1002/pssc.201100146
Publikováno v:
physica status solidi (a). 207:1717-1721
InN/ZnO:Al heterostructures deposited at low temperature on Different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc59489929ed4acaa208050aa49700d3
https://doi.org/10.1002/pssa.200983725
https://doi.org/10.1002/pssa.200983725
Publikováno v:
Journal of Applied Physics. 97:043704
Beryllium is a promising dopant for obtaining an efficient p-type conductivity of GaN. A high-pressure study of the donor-acceptor-pair (DAP) photoluminescence line at 3.39eV in Be-doped GaN samples is reported, together with ab initio calculations o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df46e1dbcf4f8c9d8c1bea83b87b2a03
https://doi.org/10.1063/1.1845581
https://doi.org/10.1063/1.1845581
Publikováno v:
Medicina. 36(752)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::dd58e906b356a48221be3043c3f13bd5
https://pubmed.ncbi.nlm.nih.gov/13368955
https://pubmed.ncbi.nlm.nih.gov/13368955
Autor:
A Núñez-Cascajero, S Valdueza-Felip, L Monteagudo-Lerma, E Monroy, E Taylor-Shaw, R W Martin, M González-Herráez, F B Naranjo
Publikováno v:
Journal of Physics D: Applied Physics; 2/15/2017, Vol. 50 Issue 6, p1-1, 1p