Zobrazeno 1 - 10
of 37
pro vyhledávání: '"F. B. McLean"'
Autor:
J. M. McGarrity, F. B. McLean, Siddharth Potbhare, Aivars J. Lelis, Daniel B. Habersat, Neil Goldsman
Publikováno v:
IEEE Transactions on Electron Devices. 55:2029-2040
A comprehensive physical model for the analysis, characterization, and design of 4H-silicon carbide (SiC) MOSFETs has been developed. The model has been verified for an extensive range of bias conditions and temperatures. It incorporates details of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d508ce923eb29ae5e5fbe108ec871e
https://doi.org/10.1109/ted.2008.926665
https://doi.org/10.1109/ted.2008.926665
Publikováno v:
Journal of Applied Physics. 79:545-552
The electrical characteristics of buried‐gate, n‐channel junction‐field‐effect transistors (JFETs) fabricated in epitaxial layers grown on 6H–SiC wafers have been measured as a function of temperature, from 218 to 773 K (−55 to 500 °C).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ab86bec97168f4143b54a5a83af1db
https://doi.org/10.1063/1.360863
https://doi.org/10.1063/1.360863
Publikováno v:
IEEE Transactions on Nuclear Science. 38:1078-1082
The authors examine the effects of neutron irradiation on ferroelectric (FE) lead-zirconate-titanate (PZT) thin films. The data show only a slight loss in the FE switched charge, as measured by the hysteresis loops, up to 1*10/sup 15/ n/m/sup 2/. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67de2c3e6f0d8621de4491521da56985
https://doi.org/10.1109/23.124077
https://doi.org/10.1109/23.124077
Publikováno v:
Journal of Applied Physics. 81:7687-7689
The electrical characteristics of 4H-SiC depletion-mode junction field-effect transistors (JFETs) have been measured over an extended temperature range from 218 to 673 K. A basic model has been applied to predict I–V characteristics for SiC JFETs o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8e1d38406370f41acd5d391ac269ba
https://doi.org/10.1063/1.365349
https://doi.org/10.1063/1.365349
Publikováno v:
ChemInform. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1494e5d3e0d4b357af5d24120fecc37b
https://doi.org/10.1002/chin.199010346
https://doi.org/10.1002/chin.199010346
Publikováno v:
Journal of Applied Physics. 97:046106
We expand upon previous work [S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C. J. Scozzie, and A. Lelis, J. Appl. Phys. 92, 4053 (2002)] by applying the device model to 6H silicon carbide metal-oxide-semiconductor field-effect transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7141f17cb7c0765ff0bc3cc892d5aa13
https://doi.org/10.1063/1.1849424
https://doi.org/10.1063/1.1849424
Publikováno v:
IEEE Transactions on Nuclear Science. 36:1808-1815
Post-irradiation positive-bias annealing and negative-bias reverse annealing of trapped positive charge in MOS oxides were studied as a function of temperature. Below 125 degrees C, only a slight increase in the positive annealing response was observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0682cc36a555fec16c424f73f8c19899
https://doi.org/10.1109/23.45373
https://doi.org/10.1109/23.45373
Publikováno v:
IEEE Transactions on Nuclear Science. 23:1506-1512
The transient response, or flat-band voltage recovery, in a number of pedigreed SiO2 gate insulator MOS capacitors following exposure to a pulsed 13-MeV electron beam was studied as a function of time, temperature, and applied bias. A quantitative co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15aaeda7f447703cd2fc6187d2556cac
https://doi.org/10.1109/tns.1976.4328530
https://doi.org/10.1109/tns.1976.4328530
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1191-1197
We present the results of an investigation into the buildup of trapped positive oxide charge responsible for a negative component of radiation-induced threshold voltage shift in both hard and soft metaloxide semiconductor (MOS) gate oxides and the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62b228a7b8316331126ad26063d07d3e
https://doi.org/10.1109/tns.1986.4334577
https://doi.org/10.1109/tns.1986.4334577
Publikováno v:
IEEE Transactions on Nuclear Science. 35:1186-1191
Annealing under negative bias of metal-oxide-semiconductor field-effect transistors (MOSFETs) previously irradiated and annealed under positive bias is studied as a function of oxide field and time. Using three different sets of samples ranging from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48879af8db78795cfef4d5d6fb1f2bdd
https://doi.org/10.1109/23.25437
https://doi.org/10.1109/23.25437