Zobrazeno 1 - 10
of 19
pro vyhledávání: '"F. B. Mancoff"'
Autor:
S. Ikegawa, K. Nagel, F. B. Mancoff, S. M. Alam, M. Arora, M. DeHerrera, H. K. Lee, S. Mukherjee, G. Shimon, J. J. Sun, I. Rahman, F. Neumeyer, H. Y. Chou, Ch. Tan, A. Shah, S. Aggarwal
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
S. M. Alam, D. Houssameddine, F. Neumeyer, I. Rahman, M. DeHerrera, S. Ikegawa, P. Sanchez, X. Zhang, Y. Wang, J. Williams, D. Gogl, H. Xu, M. Farook, D. Aceves, H. K. Lee, F. B. Mancoff, M. Chou, CH. Tan, B. Huang, S. Mukherjee, M. Lu, A. Shah, K. Nagel, Y. Kim, S. Aggarwal
Publikováno v:
2022 IEEE International Memory Workshop (IMW).
Autor:
T. Andre, F. B. Mancoff, Kerry Joseph Nagel, N. D. Rizzo, H.-J. Chia, Jon M. Slaughter, Sarin A. Deshpande, Sanjeev Aggarwal, M. DeHerrera, Jijun Sun, Dimitri Houssameddine, Michael L. Schneider, J. Janesky, Syed M. Alam, Renu Whig
Publikováno v:
IEEE Transactions on Magnetics. 49:4441-4446
A spin torque magnetoresistive random access memory (ST-MRAM) holds great promise to be a fast, high density, nonvolatile memory that can enhance the performance of a variety of applications, particularly when used as a non-volatile buffer in data st
Publikováno v:
Physical Review B. 60:R12565-R12568
Autor:
Robert L. White, William D. Nix, Robert Sinclair, O. E. Richter, Bruce M. Clemens, K. Bessho, J. F. Bobo, P. R. Johnson, F. B. Mancoff
Publikováno v:
Journal of Materials Research. 14:1560-1569
We have sputter deposited NiMnSb/PtMnSb Heusler alloy superlattices with bilayer periods from 9–160 Å. X-ray diffraction and cross-sectional transmission electron microscopy (TEM) measurements indicate that even for short bilayer periods, the supe
Autor:
Renu Whig, J. Janesky, F. B. Mancoff, C. H. Tan, Syed M. Alam, M. DeHerrera, Michael L. Schneider, H.-J. Chia, Jon M. Slaughter, Sarin A. Deshpande, Jijun Sun, N. D. Rizzo, Dimitri Houssameddine, S. Hellmold, P. LoPresti, Sanjeev Aggarwal, T. Andre, Kerry Joseph Nagel
Publikováno v:
2013 5th IEEE International Memory Workshop.
With the recent sampling of Everspin Technologies spin torque magnetoresistive random access memory (ST-MRAM), the performance gap between the high speed volatile memories of SRAM and DRAM and the non-volatile memories of hard disk drives (HDD), Flas
Publikováno v:
Physical Review B. 53:R7599-R7602
We report measurements of transport in a two-dimensional electron gas in a spatially random magnetic field in which the average magnetic field extends from the classical regime $〈{\ensuremath{\omega}}_{c}〉\ensuremath{\tau}l1$ into the quantum Hal
Autor:
Arthur C. Gossard, Shou-Cheng Zhang, R. M. Clarke, K. L. Campman, F. B. Mancoff, Charles Marcus
Publikováno v:
Physical Review B. 51:13269-13273
Autor:
Renu W. Dave, Saied N. Tehrani, B. N. Engel, F. B. Mancoff, Nicholas D. Rizzo, T. C. Eschrich
Publikováno v:
Applied Physics Letters. 83:1596-1598
We measured switching of a thin film nanomagnet driven by spin-polarized current in giant magnetoresistance spin valves as small as 50 nm×100 nm. Spin-transfer reversal is observed in both dc current and magnetic field sweeps, with a switching curre
Publikováno v:
IEEE Transactions on Magnetics. 35:2922-2924
We used cross sectional high resolution transmission electron microscopy (HRTEM) to observe DC plasma oxidized Al/sub 2/O/sub 3/ barriers directly. We measured average, minimum, and maximum thicknesses for a variety of barriers. We studied the effect