Zobrazeno 1 - 10
of 108
pro vyhledávání: '"F. Aqariden"'
Autor:
J. Pepping, J. Zhao, A. Mukhortova, Silviu Velicu, D. Hansel, Sutharsan Ketharanathan, J. H. Park, R. Kodama, F. Aqariden
Publikováno v:
Journal of Electronic Materials. 45:4620-4625
We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cuto
Autor:
Priyalal Wijewarnasuriya, R. Kodama, Sutharsan Ketharanathan, Jeremy D. Bergeson, J. Zhao, Christopher Buurma, R. Bommena, Silviu Velicu, Nibir K. Dhar, F. Aqariden
Publikováno v:
Journal of Electronic Materials. 44:3151-3156
The development of low noise-equivalent differential temperature (NEDT), high-operability midwave infrared (MWIR) focal plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates is reported. High-quality n
Autor:
Fred Harris, F. Aqariden, Lance Robertson, Christopher A. Schaake, Jun Zhao, Roger L. Strong, M. A. Kinch
Publikováno v:
Journal of Electronic Materials. 44:3102-3107
DRS Technologies is pursuing molecular beam epitaxy (MBE) HgCdTe as an alternative to its standard liquid-phase epitaxy (LPE) double-sided interdiffused (DSID) process for small-pitch, large-area, high-density vertically integrated photodiode (HDVIP
Autor:
Bengi F. Hanyaloglu, S. Banerjee, F. Aqariden, Caleb Blissett, Peng-Yu Su, Rajendra Dahal, Ishwara B. Bhat, Jeremy D. Bergeson
Publikováno v:
Journal of Electronic Materials. 43:3012-3017
CdTe passivation films have been deposited on Hg1−xCdxTe (x = 0.35) samples used for infrared detectors by low-pressure chemical vapor deposition (LPCVD) and atomic layer deposition (ALD) at temperatures as low as 135°C to 170°C. ALD has been use
Publikováno v:
Journal of Electronic Materials. 43:2978-2983
State-of-the-art room-temperature, high-resolution x-ray and gamma-ray semiconductor detectors can be fabricated from CdZnTe (CZT) crystals. The structural and electronic properties of the CZT surface, especially the contact interfaces, can have a su
Publikováno v:
Journal of Electronic Materials. 42:3252-3258
We present the effects of surface treatments on the structural and electronic properties of chemomechanically polished Cd0.9Zn0.1Te before contact deposition. Specifically, polished CdZnTe (CZT) samples were treated with four distinct chemical etchan
Autor:
D. Hansel, Silviu Velicu, R. Kodama, A. Mukhortova, Yong Chang, J. Zhao, J. H. Park, F. Aqariden
Publikováno v:
SPIE Proceedings.
We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength ~2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diod
Publikováno v:
Journal of Electronic Materials. 41:2700-2706
Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared sensor designs for focal-plane array (FPA) fabrication. HgCdTe offers two major advantages th
Publikováno v:
Journal of Electronic Materials. 41:2745-2753
Ab initio electronic structure calculations were carried out for bulk cadmium telluride (CdTe) and the unreconstructed CdTe polar (111) Cd-terminated and ( $$ \bar{1}\bar{1}\bar{1} $$ ) Te-terminated surfaces. The hybrid functional for the exchange a
Autor:
Yong Chang, F. Aqariden, Robert F. Klie, R. Kodama, X. J. Wang, Y.B. Hou, S. Sivananthan, C. R. Becker
Publikováno v:
Journal of Crystal Growth. 312:910-913
We demonstrate the growth of single crystal PbSe on GaAs(2 1 1)B using ZnTe as a buffer layer by molecular beam epitaxy. X-ray diffraction shows that the orientation of PbSe grown on ZnTe/GaAs(2 1 1)B is (5 1 1). Surface reconstruction was observed b