Zobrazeno 1 - 10
of 12
pro vyhledávání: '"F. A. Rubinelli"'
Publikováno v:
Journal of Non-Crystalline Solids. :1282-1286
Completely microcrystalline layers have been incorporated at the tunnel junction of a tandem cell in the configuration SnO2:F/p-a-SiC:H/i-a-Si:H/n-μc-Si:H/p-μc-Si:H/i-a-Si:H/n-a-Si:H/Ag and an efficiency of 9.89% has been achieved. We present here
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e82e4e59a9122c87d0b61ebad0880b
https://doi.org/10.1016/s0022-3093(98)00319-6
https://doi.org/10.1016/s0022-3093(98)00319-6
Publikováno v:
Philosophical Magazine B. 74:407-426
Using detailed computer simulations we explore the origin of the current density differences experimentally observed in the dark current density—voltage (J—V) characteristics of hydrogenated amorphous Si (a-Si:H) Schottky barriers and a-Si:H p—
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e13caf57d25e24da52be16090e9fbc74
https://doi.org/10.1080/01418639608240343
https://doi.org/10.1080/01418639608240343
Autor:
F. A. Rubinelli
Publikováno v:
Journal of Applied Physics. 75:998-1004
A photogating effect, recently predicted with computer simulations and subsequently observed in a‐Si:H p‐i‐n structures, is shown to be also present in a‐Si:H Schottky barrier devices. it is experimentally demonstrated that this photogating e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e222023869ceab0679ffc0bc50c00bff
https://doi.org/10.1063/1.356426
https://doi.org/10.1063/1.356426
Publikováno v:
Journal of Applied Physics. 73:2548-2554
Experimental results of very large, long‐wavelength photocurrent gains in amorphous silicon‐based Schottky barrier structures are reported. It is shown that these occur for devices in the space‐charge current regime operated at forward bias vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b237686020ce33961a9a7a1b9e7490cf
https://doi.org/10.1063/1.353089
https://doi.org/10.1063/1.353089
Publikováno v:
Journal of Applied Physics. 72:1621-1630
The transport‐simulation computer program amps has been used to examine the role of contact barrier heights in determining the performance of a‐Si:H p‐i‐n homojunction detector and solar‐cell devices. Current‐voltage performance, with and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::784e4cac981a5e51b46841ad7b7b02f8
https://doi.org/10.1063/1.351679
https://doi.org/10.1063/1.351679
Publikováno v:
Journal of Applied Physics. 69:7057-7066
The transport simulations provided by the computer program AMPS have been used to give an in‐depth analysis of the role of the p‐layer contact barrier height, contact transport mechanism, p‐layer thickness, and p‐layer quality on the performa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f198f651763e51c10186ea801d5cf973
https://doi.org/10.1063/1.347645
https://doi.org/10.1063/1.347645
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
The performance of a-Si:H p-i-n solar cells with different p-layer thicknesses, front contact barrier heights, and front contact/p-layer hole transport mechanisms were modeled. The authors examined how p-layer material and contact quality influenced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ec1855f7e6d5ad37cee28bb031c3eec
https://doi.org/10.1109/pvsc.1990.111886
https://doi.org/10.1109/pvsc.1990.111886
Publikováno v:
MRS Proceedings. 507
We used the internal photoemission technique to determine the exact valence and conduction band offsets at the a-SiC:H/c-Si interface and investigated with numerical simulations their effects on the photocarrier collection in p+a-SiC:H/n c-Si heteroj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27a026d46c74709b6ce7eb938728d331
https://doi.org/10.1557/proc-507-125
https://doi.org/10.1557/proc-507-125
Autor:
F. A. Rubinelli, Edith C. Molenbroek, C.H.M. van der Werf, K. F. Feenstra, Ruud E. I. Schropp
Publikováno v:
MRS Proceedings. 467
Space-charge-limited currents have been examined in a wide variety of n-i-n devices. If the devices were completely symmetric, the current-voltage characteristics would be identical for positive and negative bias, but in several devices differences b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fa16260c32b043ea970f2e4dcda43e1
https://doi.org/10.1557/proc-467-717
https://doi.org/10.1557/proc-467-717
Publikováno v:
MRS Proceedings. 420
In the present paper we show results of dark current-voltage measurements performed on p+ a- SiC:H/n c-Si heterojunction diodes at various temperatures (100–400K). We investigated the voltage derivative of these J-V curves in order to the distingui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0125c9aec37283d90ad33badaf7f22fc
https://doi.org/10.1557/proc-420-239
https://doi.org/10.1557/proc-420-239