Zobrazeno 1 - 10
of 865
pro vyhledávání: '"F. A. Kish"'
Publikováno v:
Proceedings of the IEEE. 85:1752-1764
First commercially introduced in 1990, AlGaInP light emitting diodes (LEDs) currently are the highest (luminous) efficiency visible solid-state emitters produced to date in the red through yellow spectral regime. The attainment of this high-efficienc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52d166bc9d05ef7492164334e9ea48c3
https://doi.org/10.1109/5.649654
https://doi.org/10.1109/5.649654
Autor:
C. P. Kuo, S. J. Caracci, M. G. Craford, F. A. Kish, Nick Holonyak, K. C. Hsieh, Steven A Maranowski, Robert M Fletcher, T. D. Osentowski
Publikováno v:
Journal of Applied Physics. 71:2521-2525
Data are presented demonstrating the continuous (cw) room‐temperature (23 °C) operation of planar index‐guided ‘‘buried‐mesa’’ AlxGa1−xAs‐In0.5(AlyGa1−y)0.5P‐ In0.5Ga0.5P heterostructure visible‐spectrum laser diodes. The pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084b792ea84b0fecde9b12fee258885f
https://doi.org/10.1063/1.351067
https://doi.org/10.1063/1.351067
Autor:
M. Diagne, H. Zhou, Arto V. Nurmikko, Yoon-Kyu Song, R. S. Kern, F. A. Kish, Michael R. Krames, C.P. Kuo, Carrie Carter-Coman, Richard P. Schneider
Publikováno v:
physica status solidi (a). 180:387-389
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b6f7bef9471fe8e4ec33aa9abc02a68
https://doi.org/10.1002/1521-396x(200007)180:1<387::aid-pssa387>3.0.co
https://doi.org/10.1002/1521-396x(200007)180:1<387::aid-pssa387>3.0.co
Autor:
T. A. Richard, N. El-Zein, Nick Holonyak, John Dallesasse, S. C. Smith, R. D. Burnham, A. R. Sugg, F. A. Kish
Publikováno v:
Journal of Applied Physics. 70:2031-2034
Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1−xAs (x≳0.7) confining layers commonly employed on AlxGa1−xAs‐AlyGa1−yAs‐AlzGa1−zAs (y≳z) superlattices or quantum‐well heterostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ddf9b297f43ad4ee849a846aa753605
https://doi.org/10.1063/1.350354
https://doi.org/10.1063/1.350354
Publikováno v:
Applied Physics Letters. 75:3201-3203
We show that carrier transfer to the indirect X level in the confining layer is responsible for most of the substantial decrease in the efficiency of AlGaInP light-emitting diodes (LEDs) operating at short wavelengths. Carrier transfer to the confini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40109296e943e3f0749847ea31b01d5a
https://doi.org/10.1063/1.125277
https://doi.org/10.1063/1.125277
Autor:
C. P. Kocot, D. Collins, F. A. Kish, P.N. Grillot, T. S. Tan, E. I. Chen, I.-H. Tan, Gloria E Hofler, M. Ochiai-Holcomb, Nathan F. Gardner, M. G. Craford, Michael R. Krames, S. A. Stockman, M. Hueschen, G. Sasser, Carrie Carter-Coman, B. Loh, Herman C Chui, J. Posselt, J.-W. Huang
Publikováno v:
Applied Physics Letters. 75:2365-2367
A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area (∼0.25 mm2). The TIP geometry decreases the mean photon path-lengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ea4424496945593d499fc3700a21ec8
https://doi.org/10.1063/1.125016
https://doi.org/10.1063/1.125016
Autor:
H. Zhou, F. A. Kish, R. S. Kern, Michael R. Krames, Yoon-Kyu Song, M. Diagne, Arto V Nurmikko, Carrie Carter-Coman
Publikováno v:
Applied Physics Letters. 74:3720-3722
A vertical injection, light emitting InGaN quantum well diode has been demonstrated by separating the nitride heterostructure from its sapphire substrate by ultraviolet laser photoablation within a process scheme that allows transferring the devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7705692fb495480ae806561c4dc1d20d
https://doi.org/10.1063/1.123232
https://doi.org/10.1063/1.123232
Autor:
Ilker Ozden, R. S. Kern, M. Diagne, Yoon-Kyu Song, F. A. Kish, H. Zhou, Arto V Nurmikko, Carrie Carter-Coman, Michael R. Krames, A. Vertikov
Publikováno v:
Applied Physics Letters. 74:3441-3443
A method is described for fabricating a vertical cavity light emitting structure for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4c8375f75f3418d7652dd95e781165a
https://doi.org/10.1063/1.124121
https://doi.org/10.1063/1.124121
Autor:
T. S. Tan, S. A. Stockman, Nathan F. Gardner, J.-W. Huang, F. A. Kish, Michael R. Krames, Herman C Chui, C. P. Kocot, N. Moll, E. I. Chen
Publikováno v:
Applied Physics Letters. 74:2230-2232
Improvement of 1.4× in the external quantum efficiency and luminous efficiency (lm/W) of transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes is demonstrated. The improvement is accomplished by reducing the thickness of the active l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47dac76a2304ee20cf7bf28a84f77d1c
https://doi.org/10.1063/1.123810
https://doi.org/10.1063/1.123810
Autor:
J. S. Major, W. E. Plano, F. A. Kish, K. C. Hsieh, Nick Holonyak, A. R. Sugg, Judith E. Baker
Publikováno v:
Journal of Applied Physics. 68:6174-6178
Data are presented describing the incorporation of Si in locally laser‐melted AlxGa1−xAs‐GaAs quantum well heterostructures from a thin‐film dielectric source. The composition of the melted material, the effects of the Si source (SiO2 or Si3N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439d601cb932555735e34f2838c59da6
https://doi.org/10.1063/1.346907
https://doi.org/10.1063/1.346907