Zobrazeno 1 - 10 of 11 pro vyhledávání: '"F W G Rose"'
1
On the Use of a Negative Temperature in Mass-action Law Equations for Electronic Transitions†
Autor: F. W. G. Rose
Publikováno v: Journal of Electronics and Control. 16:393-399
It is shown that the insertion of a negative temperature into mass-action law equations gives quite generally, and including the case of photon stimulated ‘ indirect ’ transitions, the electronic populations nocessary for effective boson stimulat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57f43e7837087f89031f5ea9683730c5
https://doi.org/10.1080/00207216408937653
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2
A Simple Derivation of the Thermoelectric Voltage in a Non-Degenerate Semiconductor†
Autor: F. W. G. Rose, E. Billig, J. E. Parrott
Publikováno v: Journal of Electronics and Control. 3:481-486
The thermoelectric voltage in a non-degenerate semiconductor is derived, using only such well known concepts as Fermi levels, field current, diffusion current, etc.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12d7042d0c24c63056873469dd2c04c4
https://doi.org/10.1080/00207215708937108
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4
An Easy Derivation of the Hole Lifetime in an n-type Semiconductor with Acceptor Traps
Autor: F W G Rose, D J Sandiford
Publikováno v: Proceedings of the Physical Society. Section B. 68:894-897
The recombination and generation processes for electrons and holes in an n-type semiconductor with acceptor traps are described when the concentrations of electrons and holes are much smaller than 1019 cm-3 at room temperature. With this assumption B
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a8813ff699d72a69baed3b306571b68
https://doi.org/10.1088/0370-1301/68/11/312
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5
A Comparison of the Theory of Impact Ionization with Measurements on Silicon p-n Junctions†
Autor: F. W. G. Rose
Publikováno v: Journal of Electronics and Control. 6:70-73
(1959). A Comparison of the Theory of Impact Ionization with Measurements on Silicon p-n Junctions† Journal of Electronics and Control: Vol. 6, No. 1, pp. 70-73.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49cc4f5e6a2ccc63851c2f0311746279
https://doi.org/10.1080/00207215908937129
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7
The predominant role of the surface films in the emission of electrons from reverse-biased p-n junctions in silicon carbide
Autor: F W G Rose, A E Widdowson
Publikováno v: Journal of Physics C: Solid State Physics. 6:437-449
The emission current from a reverse-biased p-n junction in SiC is known to be proportional to the surface component of the junction current, which in turn appears to be related to the junction voltage by a power law. It is suggested that the surface
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa5ff9b3a8f9c05fb66a24d0d8434c5d
https://doi.org/10.1088/0022-3719/6/3/008
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9
On the Mass-Action Laws in Degenerate Semiconductors
Autor: F W G Rose
Publikováno v: Proceedings of the Physical Society. 71:699-701
In a recent research note (Rose 1957) the mass-action laws for the reactions between free carriers and impunities in semconductors were derived: however, it was difficult to interpret the results in the degenerate case because the eftective density o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7ebbeb1302c9fa2b85f3868b7dcf17d
https://doi.org/10.1088/0370-1328/71/4/122
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