Zobrazeno 1 - 10
of 1 217
pro vyhledávání: '"F Voss"'
Autor:
Cecilia Fahlquist-Hagert, Thomas R. Wittenborn, Ewa Terczyńska-Dyla, Kristian Savstrup Kastberg, Emily Yang, Alysa Nicole Rallistan, Quinton Raymond Markett, Gudrun Winther, Sofie Fonager, Lasse F. Voss, Mathias K. Pedersen, Nina van Campen, Alexey Ferapontov, Lisbeth Jensen, Jinrong Huang, John D. Nieland, Cees E. van der Poel, Johan Palmfeldt, Michael C. Carroll, Paul J. Utz, Yonglun Luo, Lin Lin, Søren E. Degn
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-21 (2023)
Abstract Circumstantial evidence suggests that B cells may instruct T cells to break tolerance. Here, to test this hypothesis, we used a murine model in which a single B cell clone precipitates an autoreactive response resembling systemic lupus eryth
Externí odkaz:
https://doaj.org/article/77b3e9364b6c4ef5993ede3e01fc8946
Autor:
Lasse F. Voss, Amanda J. Howarth, Thomas R. Wittenborn, Sandra Hummelgaard, Kristian Juul-Madsen, Kristian S. Kastberg, Mathias K. Pedersen, Lisbeth Jensen, Anastasios D. Papanastasiou, Thomas Vorup-Jensen, Kathrin Weyer, Søren E. Degn
Publikováno v:
Frontiers in Immunology, Vol 13 (2022)
IntroductionMany autoimmune diseases are characterized by germinal center (GC)-derived, affinity-matured, class-switched autoantibodies, and strategies to block GC formation and progression are currently being explored clinically. However, extrafolli
Externí odkaz:
https://doaj.org/article/46d5f2474f894fdb93f2952297ceffaf
Autor:
S. E. Sampayan, P. V. Grivickas, A. M. Conway, K. C. Sampayan, I. Booker, M. Bora, G. J. Caporaso, V. Grivickas, H. T. Nguyen, K. Redeckas, A. Schoner, L. F. Voss, M. Vengris, L. Wang
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract Unabated, worldwide trends in CO2 production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO2 mitigating benefits of a worldwide smart grid (~ 18% reduction for
Externí odkaz:
https://doaj.org/article/03aa45fb30db485cb7efb4c352125690
Autor:
Clint D. Frye, Scott B. Donald, Catherine E. Reinhardt, Rebecca J. Nikolic, Lars F. Voss, Sara E. Harrison
Publikováno v:
Materials Research Letters, Vol 9, Iss 2, Pp 105-111 (2021)
The realization of vertical GaN devices requires deep plasma etching and is contingent on high mask selectivity. In this work, we show that SiO2 can be an effective mask material for deep etching GaN with GaN:SiO2 selectivities greater than 40—high
Externí odkaz:
https://doaj.org/article/d7f0af0ca49d482298413e2ee4f41945
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 521-532 (2021)
The wide bandgap material, Gallium Nitride (GaN), has emerged as the dominant semiconductor material to implement high-electron mobility transistors (HEMTs) that form the basis of RF electronics. GaN is also an excellent material to realize photocond
Externí odkaz:
https://doaj.org/article/d1cd314d68914fa5b17b9de391cd64d6
Autor:
Ralph F. Voss
Ralph F. Voss was a high school junior in Plainville, Kansas in mid-November of 1959 when four members of the Herbert Clutter family were murdered in Holcomb, Kansas, by “four shotgun blasts that, all told, ended six human lives,” an unimag
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1118-1128 (2020)
In this article, we focus on the physical modeling of the nonlinear operation of intrinsic photoconductive semiconductor switches (PCSS) based on 4H-SiC using coupled electrical and optical simulations to provide performance bounds of the switch as a
Externí odkaz:
https://doaj.org/article/1086ea9b5c83409295708608659238ff
Publikováno v:
Energies, Vol 14, Iss 20, p 6723 (2021)
Current electric vehicle (EV) charging systems have limited smart functionality, and most research focuses on load-balancing the national or regional grid. In this article, we focus on supporting the early design of a smart charging system that can e
Externí odkaz:
https://doaj.org/article/8ec1da1c15c042098b8721cc94f89581
Autor:
T.M. Maher, K.K. Brown, S. Cunningham, E.M. Deboer, R. Deterding, E.K. Fiorino, M. Griese, N. Schwerk, D. Warburton, L.R. Young, M. Gahlemann, F. Voss, C. Stock, null on behalf of the InPedILD trial investigators
Publikováno v:
C60. CHILDHOOD INTERSTITIAL LUNG DISEASE (chILD).
Autor:
John W. Murphy, Lars F. Voss, Clint D. Frye, Qinghui Shao, Kareem Kazkaz, Mark A. Stoyer, Roger A. Henderson, Rebecca J. Nikolic
Publikováno v:
AIP Advances, Vol 9, Iss 6, Pp 065208-065208-10 (2019)
Betavoltaic devices are suitable for delivering low-power over periods of years. Typically, their power density is on the order of nano to micro-Watts per cubic centimeter. In this work we evaluate the potential for using high-aspect ratio three-dime
Externí odkaz:
https://doaj.org/article/e21e8e0ca1b947a29ebb09739901445b