Zobrazeno 1 - 10
of 61
pro vyhledávání: '"F Pelanchon"'
Publikováno v:
Active and Passive Electronic Components, Vol 22, Iss 4, Pp 265-282 (2000)
This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event e
Externí odkaz:
https://doaj.org/article/fa2597ed5c7e498ab74efd6a762771e1
Publikováno v:
Active and Passive Electronic Components, Vol 22, Iss 3, Pp 157-163 (2000)
A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (I-V) characteristic and a theoretical arbitrary charac
Externí odkaz:
https://doaj.org/article/f03f558193ab49d28b1d36215f2b0877
Publikováno v:
Active and Passive Electronic Components, Vol 27, Iss 2, Pp 61-67 (2004)
A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4568f809088d345e5b08abdd14745b9
https://doi.org/10.1080/1042015031000073805
https://doi.org/10.1080/1042015031000073805
Publikováno v:
Journal of Physics D: Applied Physics. 35:487-491
This work presents a theoretical calculation of the I-V characteristics of an n-p junction. The total current across the n-p junction is presented as the superposition of currents due to each region of the junction. It results in ideality factor valu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f14c0112fd5eba73a2d74567dec63b1
https://doi.org/10.1088/0022-3727/35/5/312
https://doi.org/10.1088/0022-3727/35/5/312
Publikováno v:
Microelectronics International. 18:16-20
This article shows that irradiation with neutrons can be used as solution to harden commercial (COTS: Commercial‐Off‐The‐Shelf) n‐channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices against destructive events indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bed55353a401c96858495739c5cb1697
https://doi.org/10.1108/13565360110391574
https://doi.org/10.1108/13565360110391574
Publikováno v:
Active and Passive Electronic Components, Vol 24, Iss 3, Pp 155-163 (2001)
The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter-base junction parameters are degraded during the electrical stress experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abe51f839e534f4000cb088d5a61af15
https://doi.org/10.1155/2001/53209
https://doi.org/10.1155/2001/53209
Publikováno v:
Solar Energy Materials and Solar Cells. 63:101-115
A detailed theoretical method is presented for the determination of the interfacial dynamic velocity (IDV) Sd introduced at the edge of the space-charge region in the base of a solar cell. The method is based on a dynamic measurement at an arbitrary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcd94ce381d3531ff86f6f05a1ee7dfa
https://doi.org/10.1016/s0927-0248(00)00007-6
https://doi.org/10.1016/s0927-0248(00)00007-6
Publikováno v:
Active and Passive Electronic Components, Vol 22, Iss 3, Pp 157-163 (2000)
A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (I-V) characteristic and a theoretical arbitrary charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf5926d64b801297a6212675675ad48e
https://doi.org/10.1155/2000/31390
https://doi.org/10.1155/2000/31390
Autor:
F. Pelanchon, M. de la Bardonnie, S.E. Kerns, Hugh J. Barnaby, Ronald D. Schrimpf, David V. Kerns, P. Mialhe, Bharat L. Bhuva, Alain Hoffmann, Jean-Pierre Charles, D. Jiang
Publikováno v:
IEEE Transactions on Nuclear Science. 46:1804-1808
The electrical characteristics of silicon light emitting devices are changed in similar ways by X-ray irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ad362ac9b4c6c63aaf0a1794f3c22c
https://doi.org/10.1109/23.819157
https://doi.org/10.1109/23.819157
Autor:
Z.T. Kuznicki, F. Pelanchon
Publikováno v:
Solar Energy Materials and Solar Cells. 45:353-359
One of the possible optimized device designs far silicon solar cell photocurrent enhancement, consists of a cell having an inserted sub-structure with extrinsic gap levels. A middle-gap impurity and defect level band may actually allow a two infrared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da87e0ae097f5df613cc346139dac4af
https://doi.org/10.1016/s0927-0248(96)00082-7
https://doi.org/10.1016/s0927-0248(96)00082-7