Zobrazeno 1 - 3
of 3
pro vyhledávání: '"F A Mohiyaddin"'
Autor:
D P Lozano, M Mongillo, X Piao, S Couet, D Wan, Y Canvel, A M Vadiraj, Ts Ivanov, J Verjauw, R Acharya, J Van Damme, F A Mohiyaddin, J Jussot, P P Gowda, A Pacco, B Raes, J Van de Vondel, I P Radu, B Govoreanu, J Swerts, A Potočnik, K De Greve
Publikováno v:
Materials for Quantum Technology, Vol 4, Iss 2, p 025801 (2024)
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric loss at different interfaces. α -tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device
Externí odkaz:
https://doaj.org/article/f667fe9bc976494d925c93275af4b5ca
Autor:
J. Verjauw, R. Acharya, J. Van Damme, Ts. Ivanov, D. Perez Lozano, F. A. Mohiyaddin, D. Wan, J. Jussot, A. M. Vadiraj, M. Mongillo, M. Heyns, I. Radu, B. Govoreanu, A. Potočnik
Publikováno v:
npj Quantum Information, Vol 8, Iss 1, Pp 1-7 (2022)
Abstract As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced p
Externí odkaz:
https://doaj.org/article/71bd3002224e4daab1fe7e4c94ec8979
Autor:
T N Camenzind, A Elsayed, F A Mohiyaddin, R Li, S Kubicek, J Jussot, P Van Dorpe, B Govoreanu, I Radu, D M Zumbühl
Publikováno v:
Materials for Quantum Technology
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::983ab72da4763f1ef4f1951e3ef13fc2
https://edoc.unibas.ch/87556/
https://edoc.unibas.ch/87556/
