Zobrazeno 1 - 10
of 59
pro vyhledávání: '"F A Junga"'
Publikováno v:
IEEE Transactions on Nuclear Science. 27:1362-1367
The transient response of diffused resistors to high dose rate ionizing radiation has been experimentally investigated using a pulsed GaAs laser. The effects of bias, bias configuration, and meandered isolation on the transient response have been det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a1a9d9bf433c78da8d58f3d74398905
https://doi.org/10.1109/tns.1980.4331025
https://doi.org/10.1109/tns.1980.4331025
Publikováno v:
IEEE Transactions on Nuclear Science. 25:1274-1282
It has been suggested that surface states influence minority carrier trapping at low optical backgrounds in HgCdTe detectors. If this is the case then these detectors may be vulnerable to ionizing radiation degradation. Using photo MIS detectors as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1dfde610381909a39e75b9d7b0da20a
https://doi.org/10.1109/tns.1978.4329524
https://doi.org/10.1109/tns.1978.4329524
Publikováno v:
IEEE Transactions on Nuclear Science. 23:1703-1708
A technique is presented which demonstrates the feasibility of selecting junction-isolated integrated circuits (JI/ICS) for use in transient radiation environments. The procedure guarantees that all PNPN paths within the integrated circuit are identi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::689aefa36a8f768003e1d90b602ec1c6
https://doi.org/10.1109/tns.1976.4328565
https://doi.org/10.1109/tns.1976.4328565
Publikováno v:
Journal of Applied Physics. 61:2079-2082
We present measurements and analysis of high‐quality photoluminescence (PL) data from strained In0.13Ga0.87As quantum wells confined by unstrained GaAs barriers. Data were obtained from low temperature to room temperature on peak positions, intensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04f59c7843c03d172d02c07ee3585687
https://doi.org/10.1063/1.338011
https://doi.org/10.1063/1.338011
Autor:
F. A. Junga, G. M. Enslow
Publikováno v:
IRE Transactions on Nuclear Science. 6:49-53
Calculations have been performed to estimate the number of atoms displaced from normal sites by Compton Electrons from Co60 gamma rays and by slow and fast neutrons. The resultant change in carrier lifetimes and mobilities are used to predict the per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::100c96c17926330c40a812fc3cc8ad98
https://doi.org/10.1109/tns2.1959.4315679
https://doi.org/10.1109/tns2.1959.4315679
Autor:
H F MacMillan, C F Kooi, W R Scoble, John A. Thornton, W.W. Anderson, A.D. Jonath, J L Crowley, F A Junga, T K McNab
Research on the fabrication of efficient amorphous silicon solar cells is reported. Work on the deposition of a-Si:H films by sputtering is described. Other areas under scrutiny include (a) degree and effect of oxygen and/or argon incorporation into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ae7f7936b4dc83f0e9d520ee969a162
https://doi.org/10.2172/5387309
https://doi.org/10.2172/5387309
Autor:
H F MacMillan, A.D. Jonath, J L Crowley, John A. Thornton, K M Monahan, F A Junga, W.W. Anderson, J F Knudsen
Magnetron sputtering, a deposition method in which magnetic confinement of a plasma encourages high deposition rates at low working gas partial pressures, is under investigation in this program as a candidate production technology for large-scale man
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::226b011810c05f2b62f29c6847fd0dae
https://doi.org/10.2172/5497069
https://doi.org/10.2172/5497069
Autor:
W.W. Anderson, J L Crowley, F A Junga, H F MacMillan, T K McNab, John A. Thornton, A.D. Jonath, C F Kooi, W R Scoble
The prospects for generation of significant electric power using low-cost photovoltaic solar cells seem brighter with recent developments in sensitive impurity doping of glow-discharge-produced films of amorphous silicon containing large amounts of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e91b7e3bc6d68e8e648145ed3371b0f7
https://doi.org/10.2172/5601013
https://doi.org/10.2172/5601013
Publikováno v:
MRS Proceedings. 144
The effects of In doping on the structural properties of liquid phase epitaxially (LPE) grown GaAs layers are studied. The distribution coefficient of In in the GaAs at 800 ° C was determined to be 0.033 which was consistent with the value calculate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d0dab095ad374b93419f4cd66ac5ed7
https://doi.org/10.1557/proc-144-9
https://doi.org/10.1557/proc-144-9
Autor:
Pluska, Mariusz, Czerwinski, Andrzej
Publikováno v:
Journal of Applied Physics; 2017, Vol. 122 Issue 6, p063105-1-063105-9, 9p, 3 Black and White Photographs, 2 Diagrams, 2 Graphs