Zobrazeno 1 - 2
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pro vyhledávání: '"F . P Press"'
Publikováno v:
Physica Status Solidi (a). 12:381-387
A technique of the local analysis of defects in silicon oxide thin films and the expansion of the defects in semiconducting crystalline substrates is given. The technique is based on the use of a scanning electron microscope (electron beam induced cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10598165c4e92c030fba1ecf2ca77f6
https://doi.org/10.1002/pssa.2210120205
https://doi.org/10.1002/pssa.2210120205
