Zobrazeno 1 - 10
of 71
pro vyhledávání: '"F, Seigneur"'
Publikováno v:
European Respiratory Journal. 11:771-775
Human immunodeficiency virus (HIV) infection has been associated with a wide spectrum of pulmonary disease. We report three HIV-seropositive patients with rapidly worsening airway obstruction associated with bronchiectasis. All subjects (age range 33
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdc2567be1105f45c5f9b4d5e1effed7
https://doi.org/10.1183/09031936.98.11030771
https://doi.org/10.1183/09031936.98.11030771
Publikováno v:
Journal of Non-Crystalline Solids. 187:374-379
In this work, electrical properties of the SiSiO2 interface have been investigated in terms of interface-trap parameters (emission time, capture cross-section, state density) by standard and three-level charge pumping techniques in n-channel thin-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0a7b41c8b02b425932cd79665abdcc9
https://doi.org/10.1016/0022-3093(95)00167-0
https://doi.org/10.1016/0022-3093(95)00167-0
Publikováno v:
Microelectronic Engineering. 28:345-348
We have investigated the generation of interface traps during 60 Co irradiation and Fowler-Nordheim (FN) injection in MOS structures with thin plasma nitrided gate oxides. By using deep level transient spectroscopy and capacitance-voltage measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f67ca9dec9c5814e23b658c140b095
https://doi.org/10.1016/0167-9317(95)00073-h
https://doi.org/10.1016/0167-9317(95)00073-h
Publikováno v:
Microelectronics Journal. 25:567-576
The experimental investigation reported in this paper focuses on the effect of induced implantation damage on the boron diffusion process. Boron is implanted at various fluences and energies in Cz-(100) silicon through different oxide layer thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66e102d8d3df60535e3cd995fb91bfb0
https://doi.org/10.1016/0026-2692(94)90042-6
https://doi.org/10.1016/0026-2692(94)90042-6
Autor:
Gérard Guillot, Jean-Luc Autran, Thierry Billon, Claude Jaussaud, F. Seigneur, Bemard Balland, Christophe Raynaud
Publikováno v:
Journal de Physique III. 4:937-952
Nous presentons une etude des differentes instabilites observees dans des structures MOS 6H-SiC de type p par differentes techniques de mesures de capacite, de charge et de courant ainsi que par TSIC (Thermally Stimulated Ionic Current). Les analyses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01a4c06994ef1ed04748176f5da6bc08
https://doi.org/10.1051/jp3:1994176
https://doi.org/10.1051/jp3:1994176
Publikováno v:
Journal de Physique III. 3:1947-1961
Nous avons effectue une etude comparative des differentes techniques de pompage de charge (classique, a trois niveaux, spectroscopique) et d'analyse electrique conventionnelles (DLTS, mesures C-V) sur des structures MOS et MOSFET submicroniques. La r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e84f6ea0e2629f6ff651c307c1cd912e
https://doi.org/10.1051/jp3:1993252
https://doi.org/10.1051/jp3:1993252
Publikováno v:
Journal of Applied Physics. 74:3932-3935
The three‐level and spectroscopic charge pumping techniques, deep level transient spectroscopy and capacitance‐voltage measurements are both used to determine the energy distribution of Si–SiO2 interface states on submicrometer metal–oxide–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39082b60def2f9571f541d27c5038f4f
https://doi.org/10.1063/1.354493
https://doi.org/10.1063/1.354493
Publikováno v:
Journal de Physique III. 3:33-45
We have used a three-level charge pumping technique on submicronic MOS transistors. The energy distribution of capture cross sections of electron Si/SiO 2 interface states has been determined, showing a great variation of this values with energy. Tak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::737e1c2c36df578b2c868620d08dff39
https://doi.org/10.1051/jp3:1993117
https://doi.org/10.1051/jp3:1993117
Publikováno v:
Annual Review in Automatic Programming. 16:153-160
The assessment of a software product is the determination to what extent one or several agreed, required or expected conditions for the product have been fulfilled. This paper introduces the methodological basis for software assessment and certificat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c056f1e44b2cfb294eccc0a14b02c53
https://doi.org/10.1016/0066-4138(92)90024-j
https://doi.org/10.1016/0066-4138(92)90024-j
Publikováno v:
Journal de radiologie. 75(12)
Several invasive or not invasive technics were used to evaluate right ventricular insufficiency associated to severe chronic pulmonary insufficiency. But none of them were very accurate and now the use of EBT appears as a real improvement. We perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c134f9a6d4ade62def44bbb3f54263eb
https://pubmed.ncbi.nlm.nih.gov/7861358
https://pubmed.ncbi.nlm.nih.gov/7861358