Výsledky vyhledávání

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Periodical

Autor: F., Amy, B., Dede, S., Sam, C., Cara, Susie

Publikováno v: Sew News; Spring2024, Issue 393, p6-6, 1p, 3 Color Photographs, 2 Black and White Photographs

Atomic Crack Defects Developing at Silicon Carbide Surfaces Studied by STM, Synchrotron Radiation-Based μ-spot XPS and LEEM

Autor: Patrick Soukiassian, F. Amy, Christian Brylinski, T.O. Mentes, A. Locatelli

Publikováno v: Materials Science Forum. :481-486

Atomic structure and morphology of 6H-SiC(0001) and 3C-SiC(100) surfaces are studied by scanning tunneling microscopy (STM), synchrotron radiation-based !-spot x-ray photoemission spectroscopy (!-spot XPS) and low energy electron microscopy (LEEM). S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ecc379253b13135817a473b1d8494bd
https://doi.org/10.4028/www.scientific.net/msf.556-557.481

Zobrazit plný text záznamu

Silicon carbide surface oxidation and SiO2/SiC interface formation investigated by soft X-ray synchrotron radiation

Autor: P. Soukiassian, F. Amy

Publikováno v: Journal of Electron Spectroscopy and Related Phenomena. :783-788

The most recent investigations into the atomic scale understanding of silicon carbide (SiC) surface oxidation and subsequent initial oxide/SiC interface formation are reviewed for the 6H and 4H hexagonal polytypes. These studies are conducted using a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cf3cce4db225fbda41a0e9591dada98
https://doi.org/10.1016/j.elspec.2005.01.254

Zobrazit plný text záznamu

High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation

Autor: Vamsi Paruchuri, F. Amy, M.M. Frank, C.L. Hsueh, Gribelyuk, Yves J. Chabal, Huiling Shang, Renee T. Mo, A. Beverina, Evgeni Gusev, Sandrine Rivillon, Matthew Copel

Publikováno v: Solid State Phenomena. :3-6

We review the impact of semiconductor surface preparation on the performance of metal-oxidesemiconductor field-effect transistor (MOSFET) gate stacks. We discuss high-permittivity dielectrics such as hafnium oxide and aluminum oxide on silicon and on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::81545d6ffc73af6a3f51767c9833abcb
https://doi.org/10.4028/www.scientific.net/ssp.103-104.3

Zobrazit plný text záznamu

Mammographic tumor features can predict long-term outcomes reliably in women with 1–14-mm invasive breast carcinoma

Autor: Tibor Tot, Li-Sheng Chen, Robert A. Smith, Stephen W. Duffy, Tao-Hsin Tung, Hsiu-Hsi Tony Chen, Laszlo Tabar, M. F. Amy Yen, Yueh-Hsia Chiu

Publikováno v: Cancer. 101:1745-1759

BACKGROUND The radiologic images of 1–14-mm invasive breast carcinomas can be classified into 5 separate categories. The use of these mammographic indicators to predict patient outcome has important prognostic and therapeutic implications. METHODS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::608c7ddecea5872558b343be30a3b0d6
https://doi.org/10.1002/cncr.20582

Zobrazit plný text záznamu

Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3

Autor: Patrick Soukiassian, Christian Brylinski, Yeukuang Hwu, F. Amy

Publikováno v: Materials Science Forum. :215-218

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::33d66c479abd2496276f1a0fb1cb8d2f
https://doi.org/10.4028/www.scientific.net/msf.353-356.215

Zobrazit plný text záznamu

Indentification of the 6H-SiC(0001) 3×3 surface reconstruction core-level shifted components

Autor: F. Amy, C. Brylinski, Yeukuang Hwu, Patrick Soukiassian

Publikováno v: Surface Science. 464:L691-L696

We investigate the 6H-SiC(0001) 3×3 surface reconstruction by Si 2p and C 1s core-level photoemission spectroscopy using synchrotron radiation providing the first identification of surface core-level shifted components. Specific spectral features at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd8af3821a156e0c7b8946b6c5587cc3
https://doi.org/10.1016/s0039-6028(00)00637-3

Zobrazit plný text záznamu

Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 Surface

Autor: Christian Brylinski, Patrick Soukiassian, Yeukuang Hwu, F. Amy

Publikováno v: Materials Science Forum. :395-398

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd2fe8776ce3318d4d8d3de262f4b8ca
https://doi.org/10.4028/www.scientific.net/msf.338-342.395

Zobrazit plný text záznamu

Oxynitridation of cubic silicon carbide (100) surfaces

Autor: Ludovic Douillard, V. Yu. Aristov, F. Amy, Patrick Soukiassian

Publikováno v: Scopus-Elsevier

The interaction of nitric oxide (NO) on Si-rich β-SiC(100) 3×2 surface reconstruction is investigated by photoemission spectroscopy using Al Kα (1486.6 eV) and Zr Mζ (151.4 eV) x-ray lines at Si 2p, C 1s, N 1s and O 1s core levels. NO exposures a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f89199355100f8c8bc790dfdb0e3e4bc
https://doi.org/10.1116/1.581922

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání