Výsledky vyhledávání - "Eyck, G. A. Ten"

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Spectroscopy of multi-electrode tunnel barriers

Autor: Shirkhorshidian, A., Gamble, John King, Maurer, L., Carr, S. M., Dominguez, J., Eyck, G. A. Ten, Wendt, J. R., Nielsen, E., Jacobson, N. T., Lilly, M. P., Carroll, M. S.

Publikováno v: Phys. Rev. Applied 10, 044003 (2018)

Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precis

Externí odkaz: http://arxiv.org/abs/1705.01183

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Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Autor: Lu, T. M., Gamble, J. K., Muller, R. P., Nielsen, E., Bethke, D., Eyck, G. A. Ten, Pluym, T., Wendt, J. R., Dominguez, J., Lilly, M. P., Carroll, M. S., Wanke, M. C.

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with

Externí odkaz: http://arxiv.org/abs/1608.08107

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Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

Autor: Tracy, L. A., Nordberg, E. P., Young, R. W., Pinilla, C. Borras, Stalford, H. L., Eyck, G. A. Ten, Eng, K., Childs, K. D., Stevens, J., Lilly, M. P., Eriksson, M. A., Carroll, M. S.

Publikováno v: Appl. Phys. Lett. 97, 192110 (2010)

We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages appl

Externí odkaz: http://arxiv.org/abs/1011.0034

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Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Autor: Nordberg, E. P., Stalford, H. L., Young, R., Eyck, G. A. Ten, Eng, K., Tracy, L. A., Childs, K. D., Wendt, J. R., Grubbs, R. K., Stevens, J., Lilly, M. P., Eriksson, M. A., Carroll, M. S.

Publikováno v: Appl. Phys. Lett. 95, 202102 (2009)

Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system.

Externí odkaz: http://arxiv.org/abs/0909.3547

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Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

Autor: Nordberg, E. P., Eyck, G. A. Ten, Stalford, H. L., Muller, R. P., Young, R. W., Eng, K., Tracy, L. A., Childs, K. D., Wendt, J. R., Grubbs, R. K., Stevens, J., Lilly, M. P., Eriksson, M. A., Carroll, M. S.

Publikováno v: Phys. Rev. B 80, 115331 (2009)

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot

Externí odkaz: http://arxiv.org/abs/0906.3748

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The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET

Autor: Tracy, L. A., Hwang, E. H., Eng, K., Eyck, G. A. Ten, Nordberg, E. P., Childs, K., Carroll, M. S., Lilly, M. P., Sarma, S. Das

Publikováno v: Phys. Rev. B 79, 235307 (2009)

By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times 10^4$ cm$^2

Externí odkaz: http://arxiv.org/abs/0811.1394

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