Zobrazeno 1 - 10
of 236
pro vyhledávání: '"Evstigneev, M. A."'
Since the photoconversion efficiency $\eta$ of the silicon-based solar cells (SCs) under laboratory conditions is approaching the theoretical fundamental limit, further improvement of their performance requires theoretical modeling and/or numerical s
Externí odkaz:
http://arxiv.org/abs/2409.01101
The recombination rate in the space charge region (SCR) of a silicon-based barrier structure with long Shockley-Reed-Hall lifetime is calculated theoretically taking into account the concentration gradient of excess electron-hole pairs in the base re
Externí odkaz:
http://arxiv.org/abs/2301.08737
Autor:
Sachenko, A. V., Kostylyov, V. P., Bobyl, A. V., Vlasiuk, V. N., Sokolovskyi, I. O., Verbitskiy, V. N., Terukov, E. I., Shvarts, M. Z., Evstigneev, M.
The transformation of the long-wavelength edge of the external quantum exit (EQE) formation mechanisms in textured silicon solar cells (SCs) is revealed, depending on their thickness. Expressions for experimental EQE dependences on the long-wavelengt
Externí odkaz:
http://arxiv.org/abs/1712.09611
Autor:
Sachenko, A. V., Bobyl, A. V., Verbitskiy, V. N., Vlasyuk, V. M., Zhigunov, D. M., Kostylyov, V. P., Sokolovskyi, I. O., Terukov, E. I., Forsh, P. A., Evstigneev, M.
Surface recombination affects both light-to-electricity and electricity-to-light conversion in solar cells (SCs). Therefore, quantitative analysis and reduction of surface recombination is an important direction in SC research. In this work, electrol
Externí odkaz:
http://arxiv.org/abs/1712.06653
Autor:
Sachenko, A. V., Kostylyov, V. P., Bobyl, A. V., Vlasyuk, V. M., Sokolovskyi, I. O., Terukov, E. I., Evstigneev, M.
A theoretical approach to photoconversion efficiency modeling in perovskite p-i-n structures is developed. The results of this modeling compare favorably with the experiment and indicate that the surfaces of the perovskite solar cells (SCs) are natur
Externí odkaz:
http://arxiv.org/abs/1704.01564
Nonradiative exciton lifetime in silicon is determined by comparison of the experimental and theoretical curves of bulk minority charge carriers lifetime on doping and excitation levels. This value is used to analyze the influence of excitonic effect
Externí odkaz:
http://arxiv.org/abs/1608.03848
Autor:
Sachenko, A. V., Kryuchenko, Yu. V., Kostylyov, V. P., Bobyl, A. V., Terukov, E. I., Abolmasov, S. N., Abramov, A. S., Andronikov, D. A., Shvarts, M. Z., Sokolovskyi, I. O., Evstigneev, M.
We obtain theoretical expressions for the photocurrent in the Heterojunction solar cells with Intrinsic Thin layer (HIT cells). Our calculations take into account tunneling of electrons and holes through wide-bandgap layers of $\alpha$-Si:H or $\alph
Externí odkaz:
http://arxiv.org/abs/1510.06007
Autor:
Sachenko, A. V., Shkrebtii, A. I., Korkishko, R. M., Kostylyov, V. P., Kulish, N. P., Sokolovskiy, I. O., Evstigneev, M.
Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection coefficient, $Q$,
Externí odkaz:
http://arxiv.org/abs/1504.03179
Akademický článek
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Publikováno v:
In Journal of Luminescence March 2017 183:299-302
