Zobrazeno 1 - 10
of 352
pro vyhledávání: '"Evlashin S. A."'
Autor:
Skryabin, N. N., Biriukov, Yu. A., Dryazgov, M. A., Fldzhyan, S. A., Zhuravitskii, S. A., Argenchiev, A. S., Kondratyev, I. V., Tsoma, L. A., Okhlopkov, K. I., Gruzinov, I. M., Taratorin, K. V., Saygin, M. Yu., Dyakonov, I. V., Rakhlin, M. V., Galimov, A. I., Klimko, G. V., Sorokin, S. V., Sedova, I. V., Kulagina, M. M., Zadiranov, Yu. M., Toropov, A. A., Evlashin, S. A., Korneev, A. A., Kulik, S. P., Straupe, S. S.
We present an experimental platform for linear-optical quantum information processing. Our setup utilizes multiphoton generation using a high-quality single-photon source, which is demultiplexed across multiple spatial channels, a custom-designed, pr
Externí odkaz:
http://arxiv.org/abs/2410.15697
Autor:
Dubinin, O. N., Chernodubov, D. A., Kuzminova, Y. O., Shaysultanov, D. G., Akhatov, I. S., Stepanov, N. D., Evlashin, S. A.
Additive manufacturing (AM) allows printing parts of complex geometries that cannot be produced by standard technologies. Besides, AM provides the possibility to create gradient materials with different structural and physical properties. We, for the
Externí odkaz:
http://arxiv.org/abs/2109.05947
Autor:
Evlashin, S. A., Tarkhov, M. A., Chernodubov, D. A., Inyushkin, A. V., Pilevsky, A. A., Dyakonov, P. V., Pavlov, A. A., Suetin, N. V., Akhatov, I. S., Perebeinos, V.
Publikováno v:
Phys. Rev. Applied 15, 054057 (2021)
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in
Externí odkaz:
http://arxiv.org/abs/2104.06337
Autor:
Bondareva, J. V., Aslyamov, T. F., Kvashnin, A. G., Dyakonov, P. V., Kuzminova, Y. O., Mankelevich, Yu. A., Voronina, E. N., Dagesyan, S. A., Egorov, A. V., Khmelnitsky, R. A., Tarkhov, M. A., Suetin, N. V., Akhatov, I. S., Evlashin, S. A.
Future decades will experience tons of silicon waste from various sources, with no reliable recycling route. The transformation of bulk silicon into SiO2 nanoparticles is environmentally significant because it provides a way to recycle residual silic
Externí odkaz:
http://arxiv.org/abs/2007.07041
Publikováno v:
Fracture & Structural Integrity / Frattura ed Integrità Strutturale; Apr2024, Issue 68, p267-279, 13p
Autor:
Kuzminova, Y., Firsov, D., Dudin, A., Sergeev, S., Zhilyaev, A., Dyakov, A., Chupeeva, A., Alekseev, A., Martynov, D., Akhatov, I., Evlashin, S.
Publikováno v:
In Intermetallics January 2020 116
Publikováno v:
High Temperature; Aug2023, Vol. 61 Issue 4, p496-501, 6p
Autor:
Belyanin A. F., Borisov V. V., Daghetsyan S. A., Evlashin S. A., Pilevsky A. A., Samorodov V. A.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 34-43 (2017)
The carbon nanowall (CNW) layers were grown from a gas mixture of hydrogen and methane, activated by a DC glow discharge, on Si substrates (Si/CNW layered structure). The second layer of CNW was grown either on the first layer (Si/CNW/CNW structure)
Externí odkaz:
https://doaj.org/article/1f3a07c7ddb74515bf00d8eb29c63db6
Publikováno v:
High Temperature; Oct2023, Vol. 61 Issue 5, p727-729, 3p
Autor:
Dubinin, O. N., Chernodubov, D. A., Semenyuk, A. S., Shaysultanov, D. G., Zherebtsov, S. V., Evlashin, S. A., Stepanov, N. D.
Publikováno v:
Progress in Additive Manufacturing; 20240101, Issue: Preprints p1-7, 7p