Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Evgeny Gornev"'
Autor:
Dmitry Mizginov, Oleg Telminov, Sergey Yanovich, Dmitry Zhevnenko, Fedor Meshchaninov, Evgeny Gornev
Publikováno v:
Crystals, Vol 13, Iss 2, p 323 (2023)
The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible N
Externí odkaz:
https://doaj.org/article/4762369817e341feb78c461a65d1583e
Autor:
Georgy Teplov, Dmitry Zhevnenko, Fedor Meshchaninov, Vladislav Kozhevnikov, Pavel Sattarov, Sergey Kuznetsov, Alikhan Magomedrasulov, Oleg Telminov, Evgeny Gornev
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1691 (2022)
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes. We propose
Externí odkaz:
https://doaj.org/article/1313204e9ffe4b4eaf09ec62ce4fc986
Autor:
Maksim Zhuk, Sergei Zarubin, Igor Karateev, Yury Matveyev, Evgeny Gornev, Gennady Krasnikov, Dmitiry Negrov, Andrei Zenkevich
Publikováno v:
Frontiers in Neuroscience, Vol 14 (2020)
The development of highly integrated electrophysiological devices working in direct contact with living neuron tissue opens new exciting prospects in the fields of neurophysiology and medicine, but imposes tight requirements on the power dissipated b
Externí odkaz:
https://doaj.org/article/30eaa51caa354314b7060fb9e9e562e9
Autor:
Elena Tikhonova, Evgeny Gornev
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
In this paper the advantages of using self-aligned double patterning in conjunction with extreme ultraviolet photolithography were analyzed, and a promising spin-on-carbon material used as the layer for the original pattern of the structure to be for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bb57a76bb6c59d9f845e8ae51bc1f6f
https://doi.org/10.29003/m1592.silicon-2020/176-179
https://doi.org/10.29003/m1592.silicon-2020/176-179