Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Evgeniya I. Kladova"'
Autor:
Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Nikita Yu. Komarovskiy, Irina B. Parfent'eva, Evgeniya V. Chernyshova
Publikováno v:
Modern Electronic Materials, Vol 9, Iss 2, Pp 69-76 (2023)
The optical and electrical properties of zinc-doped Cz p-GaAs have been studied. Reflection spectra of ten p-GaAs specimens have been taken in the mid-IR region. Van der Pau galvanomagnetic, electrical resistivity and Hall coefficient measurements ha
Externí odkaz:
https://doaj.org/article/e98927c2b96a4bb1bfe0caa90639289a
Autor:
Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Irina B. Parfent'eva
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 3, Pp 79-84 (2021)
A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account
Externí odkaz:
https://doaj.org/article/1243a2d6f3114828a3ee1bb2993d629e
Autor:
Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into a
Externí odkaz:
https://doaj.org/article/d83dbe80d4ea493e908cb205ef5436ff
Autor:
Aleksandr G. Belov, Irina B. Parfent'eva, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Tatyana G. Yugova
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 3, Pp 79-84 (2021)
Modern Electronic Materials 7(3): 79-84
Modern Electronic Materials 7(3): 79-84
A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a23f5c0477cad36c89a48e6f22b1dd0
https://zenodo.org/record/5751160
https://zenodo.org/record/5751160
Autor:
Aleksandr G. Belov, Tatyana G. Yugova, Stanislav N. Knyazev, Vladimir E. Kanevskii, Evgeniya I. Kladova
Publikováno v:
Modern Electronic Materials 6(3): 85-89
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfd87ce44c1392a28171577d6aa99d64
https://zenodo.org/record/4592820
https://zenodo.org/record/4592820